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Germanium (Ge) surface normally has poor native oxides.
Table 2063a. Properties of germanium crystals.
Intrinsic resistivity ρi (Ωcm) |
46 |
Electron mobility µe (cm2V-1s-1) |
≤3900 |
Dielectric constant |
16.2 |
Density at 300K (g/cm3) |
5.323 |
Conduction band minimum |
L |
Spin–orbit splitting (eV) |
0.296 |
Effective masses of (100) electrons in longitudinal direction ml/m0 |
1.64 |
Electron drift
mobility µe
(m2V-1s-1) |
0.39 at 300 K |
Static refractive index |
4.0 |
Elastic constant (dyn cm-2) |
C11=12.6 ×10−11 at 300 K; C12=4.4 ×10−11 at 300 K; C44=6.77 ×10−11 at 300 K |
Raman spectra |
|
Energy (band) gap Eg (eV) |
0.74 at 0 K; 0.66 at 300 K |
Indirect bandgap (Eg,ind, eV) |
0.66 |
Direct bandgap (Eg, dir, eV) |
0.80 |
Intrinsic carrier concentration ni (cm-3) |
2.0 x 1013 |
Hole mobility µh (cm2V-1s-1) |
≤1900 |
Heavy hole mass |
0.33 |
Effective masses of heavy holes (mhh/m0) |
0.28 |
Effective masses of light holes (mlh/m0) |
0.043 |
Lattice constant (nm) |
0.5658 |
Interatomic distances in amorphous Ge (nm) |
0.244, 0.403, 0.602, 0.758 |
Optical phonon energy (meV) |
37 |
Energy gap at Γ (eV) |
0.80 |
Electron affinity (eV) |
4.01 |
Effective masses of (100) electrons in transverse direction (mt/m0) |
0.092 |
Hole drift
mobility µh
(m2V-1s-1) |
0.19 at 300 K |
Radiative recombination coefficient (cm3s−1) |
6.4 × 10−14 |
Melting temperature (K) |
1210 |
Miscibility with Si |
Complete |
Table 2063b. Some surface energies (J/m2) of low-index surfaces of germanium crystals. The types of reconstructions are indicated. (1x1) relaxed denotes an unreconstructed cleavage surface.