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Table 2076. Static dielectric constant (K), band gap energies, and conduction band (CB) offsets of the gate dielectrics on Si (silicon) substrate.
Gate dielectrics |
K |
Band gap energy (eV) |
CB offsets (eV) |
|
Gate dielectrics |
K |
Band gap energy (eV) |
CB offsets (eV) |
Si |
|
1.1 |
|
Si3N4 |
7 |
5.3 |
2.4 |
SiO2 |
3.9 |
9 |
3.2 |
Al2O3 |
9 |
8.8 |
2.8 |
Ta2O5 |
22 |
4.4 |
0.35 |
TiO2 |
60 |
3.5 |
0 |
SrTiO3 |
2000 |
3.2 |
0 |
ZrO2 |
25 |
5.8 |
1.5 |
HfO2 |
25 |
5.8 |
1.4 |
HfSiO4 |
11 |
6.5 |
1.8 |
La2O3 |
30 |
6 |
2.3 |
Y2O3 |
15 |
6 |
2.3 |
a-LaAlO3 |
30 |
5.6 |
1.8 |
|
|
|
|
Figure 2076 shows the distribution of band gap versus dielectric constant of dielectrics.
Figure 2076. Distribution of band gap versus dielectric constant of dielectrics.
|