Diffusion Coefficients of Elements in Various Materials
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Table 2384. Diffusion coefficients of elements in various materials.

Solute
Solvent (Materials)
Diffusion coefficient (cm2/s)
CO Ni 4.00 × 10-8 at 950°C, 1.40 × 10-7 at 1050°C
O vacancy
Ce0.94-Sm0.06O1.97
1.1 x 10-16 at 0 °C, 1.2 x 10-17 at -20 °C [1]
Ce0.89Sm0.11O1.945 2.2 x 105[1]
Ce0.8Sm0.2O1.9 2.8 x 108[1]
CeO1.92 1.5 x 10-5[2]
CeO1.8778 5.7 x 10-5[3]
CeO2 3.0 x 10-19 at 21.5°C, 5.5 x 10-16 at 160°C [1]
     
     
1 H
Silicon nitride films
 1.0 x 10-19
Silica 6.50 x 10-10 at 200°C, 1.30 x 10-8 at 500°C
Fe 1.66 x 10-9 at 20°C, 1.14 x 10-8 at 50°C, 1.24 x 10-7 at 100°C
Ni 1.16 x 10-8 at 85°C, 1.05 x 10-7 at 165°C
Si 1.00 x 10-7 at 900 °C, 1.50 x 10-7 at 1000 °C, 2.00 x 10-7 at 1100 °C, 6.00 x 10-7 at 1200 °C, 7.50 x 10-7 at 1300 °C
2 He Pyrex 4.50 x 10-11 at 20°C, 2.00 x 10-8 at 500°C
Silica 4.50 x 10-10 at 20°C, 7.80 x 10-8 at 500°C
3 Li GaAs

4.50 x 10-5 at 900 °C, 7.50 x 10-5 at 1000 °C, 1.00 x 10-4 at 1100 °C, 2.50 x 10-4 at 1200 °C
Si 4.00 x 10-6 at 900 °C, 7.00 x 10-6 at 1000 °C, 8.00 x 10-6 at 1100 °C, 2.00 x 10-5 at 1200 °C, 3.00 x 10-5 at 1300 °C
4 Be GaAs 6.00 x 10-11 at 900 °C, 1.50 x 10-10 at 1000 °C, 6.00 x 10-10 at 1100 °C, 8.00 x 10-10 at 1200 °C
5 B Si 2.00 x 10-15 at 900 °C, 2.00 x 10-14 at 1000 °C, 2.00 x 10-13 at 1100 °C, 1.00 x 10-12 at 1200 °C, 8.00 x 10-12 at 1300 °C
6 C Fe 1.50 x 10-8 at 800 °C, 4.50 x 10-7 at 1100 °C
Ni 3.19 x 10-9 at 700 °C, 1.47 x 10-8 at 800 °C, 0.55 x 10-7 at 900 °C
Si 9.00 x 10-14 at 900 °C, 1.00 x 10-12 at 1000 °C, 8.50 x 10-12 at 1100 °C, 7.00 x 10-11 at 1200 °C, 2.00 x 10-10 at 1300 °C
7 N AlN 0.3 x 10-8e-280(kJ/mol)/RT [4]
8 O AlN 7.5 x 10-8e-200(kJ/mol)/RT [4]
CeO2-x

8.00 x 10-8 with x = 0, 9.00 x 10-8 with x = 2, 3.00 x 10-7 with x = 4, 6.00 x 10-7 with x = 6, 8.50 x 10-8 with x = 8, and 3.00 x 10-6 with x = 10 at 1100 °C
Ce1-2xY2xO2-x 8.00 x 10-8 with x = 0, 9.00 x 10-8 with x = 2, 3.00 x 10-7 with x = 4, 6.00 x 10-7 with x = 6, 8.50 x 10-8 with x = 8, and 3.00 x 10-6 with x = 10 at 1100 °C
GaAs 5.00 x 10-8 at 900 °C, 1.00 x 10-7 at 1000 °C, 2.00 x 10-7 at 1100 °C, 5.50 x 10-7 at 1200 °C
Ni 7.4 x 10-11 at 700 °C, 5.05 x 10-10 at 800 °C, 2.3 x 10-9 at 900 °C
Si 3.00 x 10-12 at 900 °C, 1.00 x 10-11 at 1000 °C, 8.00 x 10-11 at 1100 °C, 6.00 x 10-10 at 1200 °C, 2.00 x 10-9 at 1300 °C
Ti 2.2 x 10-6 at 1200 °C
9 F    
10 Ne    
11 Na Monocrystalline CdTe 1.00 x 10-9 at 500 °C
Si 1.00 x 10-6 at 900 °C, 3.00 x 10-6 at 1000 °C, 5.00 x 10-6 at 1100 °C, 7.00 x 10-6 at 1200 °C, 8.00 x 10-6 at 1300 °C
12 Mg    
13 Al Cu 1.3 x 10-30 at 20 °C, 2.2 x 10-9 at 850 °C
Si 9.00 x 10-15 at 900 °C, 1.80 x 10-13 at 1000 °C, 1.00 x 10-12 at 1100 °C, 1.00 x 10-11 at 1200 °C, 9.00 x 10-11 at 1300 °C
14 Si Si

5.00 x 10-19 at 900 °C, 1.00 x 10-16 at 1000 °C, 1.00 x 10-15 at 1100 °C, 2.00 x 10-14 at 1200 °C, 2.00 x 10-13 at 1300 °C
SiO2 1.0-7.0 x 10-17
15 P Si 1.00 x 10-15 at 900 °C, 2.00 x 10-14 at 1000 °C, 2.00 x 10-13 at 1100 °C, 1.00 x 10-12 at 1200 °C, 1.00 x 10-11 at 1300 °C
16 S CuInSe2 1.00 x 10-16 at 577 °C
GaAs 9.00 x 10-14 at 900 °C, 8.00 x 10-13 at 1000 °C, 7.00 x 10-12 at 1100 °C, 4.00 x 10-11 at 1200 °C
Monocrystalline CdTe 4.00 x 10-15 at 500 °C
17 Cl Monocrystalline CdTe 8.00 x 10-11 at 500 °C
18 Ar    
19 K    
20 Ca    
21 Sc    
22 Ti    
23 V    
24 Cr GaAs 6.00 x 10-13 at 900 °C, 8.00 x 10-11 at 1000 °C, 4.00 x 10-9 at 1100 °C, 1.00 x 10-7 at 1200 °C
25 Mn GaAs 2.00 x 10-11 at 900 °C, 9.00 x 10-11 at 1000 °C, 6.00 x 10-10 at 1100 °C, 2.00 x 10-9 at 1200 °C
26 Fe    
27 Co    
28 Ni    
29 Cu CuInSe2 1.00 x 10-10 at 400 °C
β-CuZn

1.50 x 10-12 at 300 °C, 1.50 x 10-10 at 400 °C, 6.00 x 10-9 at 500 °C, 3.50 x 10-8 at 600 °C, 1.50 x 10-7 at 700 °C, 4.00 x 10-7 at 800 °C, 9.50 x 10-7 at 900 °C
GaAs

2.00 x 10-4 at 900 °C, 4.00 x 10-4 at 1000 °C, 6.00 x 10-4 at 1100 °C, 7.00 x 10-4 at 1200 °C
Monocrystalline CdTe 5.00 x 10-9 at 500 °C
Si 6.00 x 10-5 at 900 °C, 9.00 x 10-5 at 1000 °C, 1.00 x 10-4 at 1100 °C, 2.00 x 10-4 at 1200 °C, 3.00 x 10-4 at 1300 °C
SiO2 10-10~10-12 at 23°C [6]
30 Zn Al 2.00 x 10-9 at 500 °C
CuInSe2 1.00 x 10-13 at 500 °C
β-CuZn

1.50 x 10-12 at 300 °C, 4.00 x 10-10 at 400 °C, 2.00 x 10-8 at 500 °C, 6.00 x 10-8 at 600 °C, 2.50 x 10-7 at 700 °C
Monocrystalline CdTe 8.00 x 10-12 at 500 °C
31 Ga GaAs 4.00 x 10-14 at 1100 °C, 9.00 x 10-13 at 1200 °C
Si 7.00 x 10-14 at 1000 °C, 5.00 x 10-13 at 1100 °C, 5.00 x 10-12 at 1200 °C, 1.00 x 10-11 at 1300 °C
32 Ge Ge

2.00 x 10-19 at 500 °C, 2.00 x 10-17 at 600 °C, 2.00 x 10-15 at 700 °C, 7.00 x 10-14 at 800 °C, 8.00 x 10-13 at 900 °C
GST 4.04 × 10-5 in Ge1Sb2Te4 liquid [5]
Si

5.00 x 10-18 at 900 °C, 1.00 x 10-16 at 1000 °C, 7.00 x 10-14 at 1200 °C, 5.00 x 10-12 at 1400 °C
GeTe 1.00 x 10-6 at 230 °C, 4.65 x 10-5 at liquid
33 As Si 5.00 x 10-15 at 1000 °C, 4.00 x 10-14 at 1100 °C, 3.00 x 10-13 at 1200 °C, 2.00 x 10-12 at 1300 °C
34 Se CuInSe2 1.00 x 10-12 at 700 °C
GaAs 7.00 x 10-15 at 900 °C, 1.00 x 10-13 at 1000 °C, 2.00 x 10-12 at 1100 °C, 4.00 x 10-11 at 1200 °C
35 Br    
36 Kr    
37 Ru    
38 Sr    
39 Y W 1.82 x 10-8 at 1730 °C
40 Zr    
41 Nb    
42 Mo    
43 Tc    
44 Ru
    
45 Rh    
46 Pd    
47 Ag Al 1.20 x 10-9 at 50 °C
48 Cd Cu 2.70 x 10-15 at 20 °C
CuInSe2 6.00 x 10-7 at 450 °C
49 In Monocrystalline CdTe
 2.00 x 10-11 at 500 °C
Si 8.00 x 10-15 at 1000 °C, 9.00 x 10-14 at 1100 °C, 2.00 x 10-12 at 1200 °C, 1.00 x 10-11 at 1300 °C
50 Sn GaAs 2.00 x 10-13 at 900 °C, 1.00 x 10-12 at 1000 °C, 7.00 x 10-12 at 1100 °C, 4.00 x 10-11 at 1200 °C
Pb 1.6 x 10-10 at 285°C
51 Sb Ag 3.6 x 10-10 at 20°C
β-CuZn 1.50 x 10-12 at 300 °C, 4.00 x 10-10 at 400 °C, 2.00 x 10-8 at 500 °C, 6.00 x 10-8 at 600 °C, 2.50 x 10-7 at 700 °C
GST 5.28 × 10-5 in Ge1Sb2Te4 liquid [5]
Si 2.00 x 10-15 at 1000 °C, 3.00 x 10-14 at 1100 °C, 3.00 x 10-13 at 1200 °C, 2.00 x 10-12 at 1300 °C
52 Te GaAs 1.00 x 10-13 at 1000 °C, 2.00 x 10-12 at 1100 °C
GST 4.06 × 10-5 in Ge1Sb2Te4 liquid [5], ~10-6 in super-cooled liquid at 227°C [6]
GeTe 1.00 x 10-6 at 230 °C, 3.93 x 10-5 at liquid
53 I    
54 Xe    
55 Cs    
56 Ba    
57 La    
58 Ce W 9.5 x 10-10 at 1730 °C
59 Pr    
60 Nd    
61 Pm    
62 Sm    
63 Eu    
64 Gd    
65 Tb    
66 Dy    
67 Ho    

68

Er

    
69
 Tm    
70
 Yb    
71
 Lu    
72
 Hf    
73
 Ta    
74
 W    
75
 Re    
76
 Os    
77
 Ir    
78
 Pt    
79
 Au Ag 3.6 x 10-10 at 860°C
GaAs 2.00 x 10-10 at 900 °C, 9.00 x 10-10 at 1000 °C, 8.00 x 10-9 at 1100 °C, 3.50 x 10-8 at 1200 °C
Ge 5.91 x 10-18 for α-Ge at 22°C
Monocrystalline CdTe 6.00 x 10-12 at 500 °C
Pb 4.6 x 10-10 at 285°C
Si 6.39 x 10-30 for α-Si at 22°C, 1.00 x 10-7 at 900 °C, 2.00 x 10-7 at 1000 °C, 8.00 x 10-7 at 1100 °C, 1.00 x 10-6 at 1200 °C, 4.00 x 10-6 at 1300 °C
80
 Hg    
81
 Tl    
82
 Pb    
83
 Bi Pb 1.1 x 10-16 at 20°C
84
 Po    
85
 At    
86
 Rn    
87
 Fr    
88
 Ra    
89
 Ac    
90
 Th    
91 Pa    
92 U W 1.3 × 10-11 at 1730 °C

 

 

 

 

 

 

 

 

 

[1] Yong Ding, YongMan Choi, Yu Chen, Ken C. Pradel, Meilin Liu, Zhong Lin Wang, Quantitative nanoscale tracking of oxygen vacancy diffusion inside single ceria grains by in situ transmission electron microscopy, Materials Today, https://doi.org/10.1016/j.mattod.2020.04.006 (2020).
[2] D.A. Andersson, S.I. Simak, N.V. Skorodumova, I.A. Abrikosov, B. Johansson, PNAS 103 (2006) 3518–3521.
[3] A. Gotte, D. Spangberg, K. Hermansson, M. Baudin, Solid State Ionics 178 (2007) 1421–1427.
[4] Martin Sternitzke and Gerd Muller, EELS Study of Oxygen Diffusion in Aluminum Nitride, Journal of American Ceramic Society, https://doi.org/10.1111/j.1151-2916.1994.tb05358.x (1994).
[5] Zhimei Sun, Jian Zhou, Andreas Blomqvist, Lihua Xu and Rajeev Ahuja, Local structure of liquid Ge1Sb2Te4 for rewritable data storage use, J. Phys.: Condens. Matter 20 (2008) 205102.
[6] Sijung Yoo, Electrical Switching Characteristics of Chalcogenide Thin Films, PhD thesis, 2019.

 

 
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