Chapter/Index: Introduction | A |
B |
C |
D |
E |
F |
G |
H |
I |
J |
K |
L |
M |
N |
O |
P |
Q |
R |
S |
T |
U |
V |
W |
X |
Y |
Z |
Appendix
TEM Techniques for Failure Analysis of IC Devices
| Table 24. TEM techniques for failure analysis of IC devices .
| TEM techniques |
Details |
Examples |
| Conventional TEM |
Used for basic imaging and structural analysis of defects, such as dislocations and stacking faults. It utilizes diffraction, thickness-mass, and phase contrast mechanisms to reveal details at the nanoscale. |
Diffraction contrast |
| Thickness-mass contrast |
| Phase contrast |
| High-Resolution TEM (HRTEM) |
Provides atomic-scale resolution, making it suitable for precise measurement of device structures like thin gate oxides. Lattice fringes visible in HRTEM images help in calibrating dimensions and identifying materials. |
|
| Energy filtered TEM (EFTEM) |
|
|
| Scanning Transmission Electron Microscopy (STEM) |
Combines the principles of TEM and scanning electron microscopy, allowing for high-resolution imaging with elemental analysis capabilities. STEM modes include bright-field, annular dark-field (ADF), and high-angle annular dark-field (HAADF) imaging, which provides Z-contrast (atomic number contrast) imaging useful in defect analysis. |
|
| Energy Dispersive Spectroscopy (EDS) |
Used for elemental analysis by detecting characteristic X-rays emitted when the electron beam interacts with the sample. This technique helps identify the elemental composition of defects or impurities in semiconductor devices. |
|
| lectron Energy Loss Spectroscopy (EELS) |
Analyzes the energy lost by electrons as they pass through the sample, providing information about the chemical composition and bonding states of the materials. |
|
| Electron Tomography |
Involves taking a series of images at different tilts to reconstruct a 3D model of the sample. This is particularly useful for analyzing complex device structures or defects. |
|
| Electron Holography |
Used for mapping electrostatic potential distributions and dopant profiles, offering insights into electrical characteristics of semiconductor devices. |
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