This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
Various techniques can be used to analyze the dopants in semiconductors:
Except SIMS, the other techniques are applicable for the nanoscale dimensions of state-of-the-art semiconductor devices. Furthermore, one key to the success of dopant analysis in nanometer-scale is the specimen preparation to expose the region of interest, for instance, using focused ion beam (FIB) milling.
i) Scanning electron microscopy (SEM) [1, 2],
ii) Scanning spreading resistance microscopy (SSRM) ,
iii) Scanning capacitance microscopy (SCM) ,
iv) Off-axis electron holography ,
v) Secondary ion mass spectrometry (SIMS).
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