Applications of p-i-n Structures in EM-related Devices
- Practical Electron Microscopy and Database -
- An Online Book -

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This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
 

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Figure 3807 shows the structure of EDS detector. The active Si can be an intrinsic silicon crystal in thickness of about 3 mm. The collector of e-h pairs is a reversed p-i-n structure. The Si dead layers are p-/n-type silicon crystal in thickness of about 100 nm. The existing dead layers also indicate that the generated charges cannot be completely detected.

Structure of EDS detector

Figure 3807. Structure of EDS detector.

 

 

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