Precursor Gases used in Ion-beam/FIB/Electron-beam Induced Depositions
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Table 4523. Precursor gases used to deposit materials in FIB.

Precursor gases
Deposited materials
Beam ions
Reference
Naphthalene {C10H8}, or C14H10
C
Ga
Tetraethyl Orthosilicate {Si(OC2H5)4}, or C4H16Si4O4
SiO2
Ga
Methyl cyclopentadienyl trimethyl platinum {(CH3)3Pt(CpCH3)}, C5H5Pt(CH3)3, or (CH3C5H4)(CH3)3Pt
Pt
Ga
Tungsten hexacarbonyl {W(CO)6}
W
Ga
Iron pentacarbonyl {Fe(CO)5}
Fe
Ga
[1]

The materials deposited in FIB normally contain impurities. For instance, FIB-deposited tungsten material can consist of approximately 80% W, 5% O, 5% C, and 10% Ga if W(CO)6 precursor and Ga beam are used.

 

 

[1] Kazuo Furuya, Nanofabrication by advanced electron microscopy using intense and focused beam, Sci. Technol. Adv. Mater. 9 (2008) 014110.

 

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