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Radiation Ionization Energy to Form Electron-Hole Pairs in Materials
- Practical Electron Microscopy and Database -
- An Online Book -
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https://www.globalsino.com/EM/
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This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, managers, and researchers. The sections and pages with a red star (*) or without stars are for basic studies, those with two red stars (**) are at medium level; and those with three red stars (***) are for advanced studies. If you are citing the contents in the book, for instance, please cite them in the format of “Practical Electron Microscopy and Database, Y. Liao, 2006, pp 4832” for https://www.globalsino.com/EM/4832.html, or in the format of “Practical Electron Microscopy and Database, Y. Liao, (2006), https://www.globalsino.com/EM/4832.html”.
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Figure 4636 and Table 4636 shows the average energy (radiation ionization energy) required to form one electron-hole pair versus bandgap energy for a number of semiconductor materials.
Figure 4636. The average energy required to form one electron-hole pair versus bandgap energy for a number of semiconductor materials [1].
Table 4636. Properties of Semiconductor Materials. [1]
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Atomic Number (Z) |
Band Gap (eV) |
Energy per e-h Pair (eV) |
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Best γ-Ray Energy Resolution (FWHM) |
| Si (300 K) |
14 |
1.12 |
3.61 |
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- |
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1.17 @ 77 K |
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| Ge (77 K) |
32 |
0.74 |
2.98 |
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420 eV @ 100 keV |
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920 eV @ 660 keV |
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1300 eV @ 1330 keV |
| CdTe (300 K) |
48-52 |
1.47 |
4.43 |
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3800 eV @ 122 keV |
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7500 eV @ 661 keV |
| HgI2 (300 K) |
80-53 |
2.13 |
6.5 |
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850 eV @ 6 keV |
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3500 eV @ 122 keV |
| GaAs (300 K) |
31-33 |
1.43 |
4.2 |
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650 eV @ 60 keV |
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2600 eV @ 122 keV |
[1] Glenn F. Knoll, Radiation Detection and Measurement, Wiley (1979).
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