Dissociation of Defects in Crystals
- Practical Electron Microscopy and Database -
- An Online Book -

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This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.

 

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Dissociation is often found at grain boundaries in materials with low stacking fault energies such Ag, Au, Ni, Si, and Cu, when a single planar interface is ‘‘wetted’’ by a solid layer with a different orientation and sometimes with a different structure. For example, certain grain boundaries are found to form a thin layer with the 9R structure in face centered cubic (fcc) Au (gold) [1] or even the body centered cubic (bcc) structure in fcc Cu (copper) [2].

 

[1] D. L. Medlin, S. M. Foiles, and D. A. Cohen, Acta Mater. 49, 3689 (2001).
[2] C. Schmidt, F. Ernst, M.W. Finnis, and V. Vitek, Phys. Rev. Lett. 75, 2160 (1995).

 

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