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A natural barrier prevents electrons from leaking out
from the surface of materials. This barrier is termed the work function
(φ) and has a value of a few eV.The sum EF (Fermi energy) and φ (Work function) for metals is often of ~10 eV.
Table 4959a. Work function of some transition metal nitride compounds obtained with methods of MOS capacitor Vfb (and FN tunnelling).
Transition metal nitride
|
Dielectrics
|
φ (eV) |
Method |
NbSiN |
HfO2 |
4.8 |
Vfb |
NbSiN |
SiO2 |
4.7 |
Vfb |
NbN |
HfO2 |
4.9 |
Vfb |
NbN |
SiO2 |
4.7 |
Vfb |
MoN |
SiO2 |
4.7-5.33 |
Vfb |
TaSiN |
HfO2 |
4.4-4.5 |
Vfb |
TaN |
HfO2 |
4.34-4.8 |
Vfb |
TaN |
SiO2 |
4.4-4.7 |
Vfb |
TaN |
HfO2 |
4.4-4.65 |
Vfb |
HfN |
HfO2 |
4.75-4.8 |
Vfb |
HfN |
SiO2 |
4.65-4.7 |
Vfb |
ZrN |
SiO2 |
4.0-4.9 |
Vfb + FN |
TiAlN |
SiO2 |
4.36-5.1 |
Vfb |
TiN |
Al2O3 |
4.85-5.2 |
Vfb |
TiN |
SiO2 |
4.15-5.10 |
Vfb + FN |
Table 4959b. Operating parameters and characteristics of electron sources.
Type of source |
Tungsten
thermionic |
LaB6
thermionic |
Schottky
emission |
Cold field
emission |
Material |
W |
LaB6 |
ZrO/W |
W |
ds (µm) |
≈40 |
≈10 |
≈0.02 |
≈0.01 |
ΔE (eV) |
1.5 |
1.0 |
0.5 |
0.3 |
φ (eV) |
4.5 |
2.7 |
2.8 |
4.5 |
T (K) |
2700 |
1800 |
1800 |
300 |
E (V/m) |
Low |
Low |
≈108 |
>109 |
Je (A/m2) |
≈104 |
≈106 |
≈107 |
≈109 |
β (Am-2/sr-1) |
≈109 |
≈1010 |
≈1011 |
≈1012 |
Vacuum (Pa) |
<10-2 |
<10-4 |
<10-7 |
≈10-8 |
Lifetime (hours) |
100 |
1000 |
104 |
104 |
** ds -- Effective (or virtual) source
diameter; ΔE -- Energy spread of the electron beam; φ -- Work function; T -- Operating temperature; E -- Electric field; Je -- current density of electron beam; β -- Electron-optical brightness at the cathode.
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