In chemistry, bond energy is the measure of bond strength in a chemical bond. This energy is required to break a single bond for a mole of a specific substance. The bond energy can be directly related to the bond length (or called bond distance). Most bond energies are in the range between 100 and 1000 kJ/mol. The bond energy should not be confused with bond-dissociation energy. Table 1823a lists the range of bond energies for different bondings, and Table 1823b lists the strengths of some diatomic bonds. Strong bond are > 800 kJ/mo, while weak bonds are < 200 kJ/mol.
Table 1823a. Range of bond energies for different bondings.
Bond |
Covalent bonding |
Ionic bonding |
Van der Waals bonding |
Energy range (kJ/mol) |
100 – 475 |
450 – 1000 |
2 – 10 |
Table 1823b. Diatomic bond strength. (1 kJ/mol = 0.010364512 eV/bond, or convert with excel file)
Bond energy |
Bond |
Temperature (°C) |
Bond Length (Å) |
Substance examples |
kJ/mol |
eV/bond |
86.6 |
|
Pb-Pb |
|
|
|
100 |
1.036 |
In–In |
|
|
|
108.78 |
|
Te–C |
|
|
|
125.6 |
1.302 |
Bi–Te |
|
|
|
|
1.309 |
Sb-Sb |
|
|
Ge17Se68Sb15[1] |
138.1 |
|
Te–Te |
|
|
(Ge2Sb2Te5)0.9Se0.1 [4] |
141.0 |
|
Ge–Sb |
|
|
(Ge2Sb2Te5)0.9Se0.1 [4] |
142 |
1.472 |
O–O |
0 |
|
|
148.5 |
|
Ge–Te |
|
|
(Ge2Sb2Te5)0.9Se0.1 [4] |
149 |
1.544 |
I–I |
0 |
|
I2 |
151.9±10.5 |
|
In-Sb |
|
|
|
155 |
1.606 |
F–F |
0 |
|
|
157.32 |
|
Ge–Ge |
|
|
(Ge2Sb2Te5)0.9Se0.1 [4] |
|
1.631 |
Ge-Ge |
|
|
Ge17Se71Sb12[1] |
163 |
1.690 |
N–N |
|
1.47 |
|
|
1.724 |
Ge-Sb |
|
|
Ge17Se74Sb9[1] |
167 |
1.731 |
N–N |
0 |
|
|
170.4 |
1.766 |
Se–Bi |
|
|
|
175 |
1.814 |
Sb–Sb |
|
|
|
175 |
1.814 |
Br–I |
0 |
|
|
|
1.906 |
Se-Sb |
|
|
Ge17Se77Sb6 [1] |
183.68 |
|
Sb-Se |
|
|
(Ge2Sb2Te5)0.9Se0.1 [4] |
184 |
1.907 |
K–H |
|
|
|
184.096 |
|
Se–Se |
|
|
(Ge2Sb2Te5)0.9Se0.1 [4] |
184 ± 16 |
|
Fe–CO |
–273 |
|
η5-Cyclopentadienyl dicarbonyl iron anion |
184.933 |
|
Te–Se |
|
|
(Ge2Sb2Te5)0.9Se0.1 [4] |
|
1.908 |
Se-Se |
|
|
Ge17Se80Sb3 [1] |
185 |
|
Ge–Ge |
|
|
|
188 ± 16 |
|
Fe–CO |
25 |
|
η5-Cyclopentadienyl dicarbonyl iron anion |
190 |
1.970 |
O–F |
0 |
|
|
190 |
1.969 |
Br–Br |
0 |
|
|
193 |
2.000 |
Br–Br |
|
|
Br2 |
195 |
2.021 |
Sb–Te |
|
|
|
195 |
|
Se–Te |
|
|
|
200 |
|
As–As |
|
|
|
200 |
|
Ge–Te |
|
|
|
201 |
2.083 |
N–O |
0 |
1.44 |
|
201 |
2.083 |
P–P |
0 |
|
|
201 |
2.083 |
O–Br |
0 |
|
|
201 |
2.083 |
O–I |
0 |
|
|
202 |
2.094
|
Na–H |
|
|
|
204 |
2.114 |
O–O |
|
1.48 |
|
204.6±8.8 |
|
H–Ti |
|
|
|
205 |
|
As–Te |
|
|
|
205.4344 |
|
Ge–Se |
|
|
(Ge2Sb2Te5)0.9Se0.1 [4] |
|
2.144 |
Ge-Se |
|
|
Ge17Se83 [1] |
206.91 |
2.145 |
Ge–Se |
|
|
|
208 |
2.156 |
Cl–I |
0 |
|
|
213 |
2.208 |
C–I |
0 |
|
|
216 |
2.239
|
Cl–Br |
0 |
|
|
218 |
2.259 |
O–Cl |
0 |
|
|
218 |
2.259 |
S–Br |
0 |
|
|
218.0±17.0 |
|
In-Te |
|
|
|
220 |
|
Se–Te |
|
|
|
220 |
|
Si–Te |
|
|
|
222 |
2.301
|
Si–Si |
0 |
|
|
222±17 |
|
O–F |
|
|
|
225 |
|
Se–Se |
|
|
|
225 |
|
P–P |
|
|
|
226 |
2.342 |
S–S |
0 |
|
|
230 |
|
As–Se |
|
|
|
230 |
|
Sb–S |
|
|
|
230 |
|
Ge–Se |
|
|
|
238 |
2.467 |
Li–H |
|
|
|
240 |
2.487 |
Cl–Cl |
0 |
|
|
240 |
|
P–Se |
|
|
|
243 |
2.519 |
N–Br |
0 |
|
|
247 |
2.560 |
As–H |
|
|
AsH3 |
249 |
2.581 |
F–Cl |
0 |
|
|
249 |
2.581 |
F–Br |
0 |
|
|
251 |
|
Pb-Te |
|
|
|
255 |
2.643 |
S–Cl |
0 |
|
|
255 |
|
S–Se |
|
|
|
259.8 |
|
Te-Te |
|
|
|
260 |
|
As–S |
|
|
|
263.6 |
|
Ge-Ge |
|
|
|
265 |
|
Ge–S |
|
|
|
266 |
2.757 |
S–S |
|
|
|
269.0±20 |
|
O–Cu |
|
|
|
270 |
|
P–S |
|
|
|
271 |
2.809 |
S–Cl |
|
|
|
272 |
2.819 |
C–S |
0 |
|
|
274 |
2.840 |
Ga–H |
|
|
|
275 |
|
Sb–Sb |
|
|
|
277.4 |
|
Sb-Te |
|
|
|
277.8 |
2.879 |
H–Cu |
|
|
|
278 |
2.881 |
F–I |
0 |
|
|
280 |
|
S–S |
|
|
|
283 |
2.933 |
N–F |
0 |
|
|
284 |
2.944 |
S–F |
0 |
|
|
285 |
2.954 |
C–Br |
0 |
|
|
295 |
3.058 |
H–I |
0 |
|
|
295 |
3.058 |
Cl–Cl |
|
|
Cl2 |
297±96 |
|
N–Al |
|
|
|
<299.2 |
|
H–Si |
|
|
|
299.2 |
|
Sb–Sb |
|
|
|
301 |
3.120 |
C–Si |
|
|
1.86 |
305 |
3.161 |
C–N |
0 |
1.47 |
|
313 |
3.244 |
N–Cl |
0 |
|
|
318 |
3.296 |
H–Si |
0 |
|
|
318 |
3.296 |
C–Si |
0 |
|
|
322 |
3.337 |
H–P |
0 |
|
PH3 |
327 |
3.389 |
C–Cl |
0 |
|
|
338.3 |
3.506 |
C–H |
|
|
|
<340 |
|
H–N |
|
|
|
340 |
3.524 |
Si–Si |
|
|
|
343 |
3.555 |
N–F |
|
|
|
346 |
3.586 |
C–C |
0 |
1.54 |
|
358 |
3.710 |
C–O |
0 |
1.43 |
|
358 |
3.710 |
Na–OH |
|
|
|
359.8 |
|
Sn–Te |
|
|
Sn-doped Ge2Sb2Te5 [3] |
361 |
3.710 |
K–OH |
|
|
|
362 |
3.742 |
H–Br |
0 |
|
|
363 |
3.752 |
H–S |
0 |
|
|
363 |
3.762 |
H–I |
|
|
HI |
368 |
3.814 |
Si–O |
|
1.61 |
|
376 |
3.897 |
Cs–OH |
|
|
|
376 |
3.897 |
O–Te |
|
|
|
376 |
3.897 |
C–C |
|
|
CH3CH3 |
377 |
3.907 |
C–C |
|
|
Ethane |
379 |
3.928 |
Ba–OH |
|
|
|
386 |
4.0007 |
H–N |
0 |
|
|
391 |
4.0525 |
H–N |
|
|
NH3 |
397±29 |
|
C–Cl |
|
|
|
340 |
3.5239 |
B–H |
|
|
|
397 |
|
Ge-Te |
|
|
Ge2Sb2Te5 |
405 |
4.1976 |
Mg–OH |
|
|
|
411 |
4.2598 |
H–C |
0 |
|
|
413.4±13 |
|
F–Cu |
|
|
|
414.2 |
|
Ge–Te |
|
|
|
415 |
4.301 |
Sr–OH |
|
|
|
418 |
4.332 |
N=N |
|
1.24 |
|
418±14 |
|
C–Y |
|
|
|
421 |
4.363 |
C–H |
|
|
Ethane |
423±29 |
|
C–Ti |
|
|
|
427±23.8 |
|
C–V |
|
|
|
427.6 |
4.43186 |
H–O |
|
|
|
428 |
4.436 |
H–Cl |
0 |
|
HCl |
432 |
4.477 |
H–H |
0 |
|
H2 |
434.0 |
4.498 |
O–Sb |
|
|
|
439 |
4.55 |
C–H |
|
|
Methane |
442 |
4.581 |
Ca–OH |
|
|
|
444 |
4.601 |
In–F |
|
|
|
444±13 |
|
C–Ce |
|
|
|
447 |
4.6329 |
Li–OH |
|
|
|
450 |
4.664 |
N=N |
|
|
N2H2 |
451.5 |
4.6795 |
C–Si |
|
|
|
452 |
4.6847 |
Si–O |
0 |
|
|
459 |
4.757 |
H–O |
0 |
|
|
456 |
|
Ge-Te |
|
|
Ge2Sb2Te5 |
461.9±5.0 |
|
F–Mg |
|
|
|
462±20 |
|
C–La |
|
|
|
464 |
4.809 |
C–H |
|
|
Ethylene |
464.8 |
4.817 |
F–Mo |
|
|
|
469 |
4.8609 |
S=O |
|
|
SO3 |
470±15 |
|
N–Si |
|
|
|
472 |
4.892 |
Be–OH |
|
|
|
476.1±33.1 |
|
N–Ti |
|
|
|
477.4±17.2
|
|
N–V |
|
|
|
481±15.9 |
|
C–Mo |
|
|
|
481±63 |
|
N–Y |
|
|
|
485 |
5.0267 |
C–F |
0 |
|
|
492 |
5.099 |
H–O |
|
|
|
498 |
5.1615 |
O=O |
|
1.21 |
|
502 |
5.20298 |
Al–O |
|
|
|
513.4±8 |
|
C–P |
|
|
|
532 |
5.5139 |
S=O |
|
|
SO2 |
540±25 |
|
C–Hf |
|
|
|
552 |
5.721 |
C–F |
|
|
|
552.7±2.1 |
|
F–Si |
|
|
|
558 |
5.783 |
C–H |
|
1.06 |
Acetylene, HC≡CH |
561±25 |
|
C–Zr |
|
|
|
564.8±25.1 |
|
N–Zr |
|
|
|
565 |
5.8559 |
H–F |
0 |
1.56 |
HF |
569±13 |
|
C–Nb |
|
|
|
569±33 |
|
F–Ti |
|
|
|
571±3 |
|
O–Al |
|
|
|
573±13 |
|
F–Ta |
|
|
|
580.0±3.8 |
|
C–Rh |
|
|
|
581 |
6.0217 |
B–S |
|
|
|
590±63 |
|
F–V |
|
|
|
>594 |
|
C–Os |
|
|
|
598±5.9 |
|
C–Pt |
|
|
|
605.0±20.9 |
|
F–Y |
|
|
|
607 |
6.291 |
N=O |
|
1.20 |
|
607±21 |
|
C–C |
|
|
|
611±84 |
|
N–Ta |
|
|
|
612 |
6.343 |
C=C |
|
1.33 |
|
615 |
6.374 |
C=N |
|
1.27 |
|
616.2±10.5 |
|
C–Ru |
|
|
|
617.1±20.9 |
|
N–P |
|
|
|
630.57±0.13 |
|
N–O |
|
1.15 |
Nitric Oxide |
650±15 |
|
F–Hf |
|
|
|
659.0 |
6.830 |
O–Ge |
|
|
|
663.6±6.3
|
|
F–Al |
|
|
|
682 |
7.0685 |
C=C |
|
|
C2H4 |
720 |
7.462 |
C=C |
|
|
CH2CH2 |
728 |
7.545 |
C=C |
|
|
Ethylene |
754.3±10 |
|
C–N |
|
|
|
782 |
8.105 |
C=O |
|
|
H2CO |
799 |
8.281 |
C=O |
|
1.23 |
CO2 |
799.1 |
8.282 |
O–Ta |
|
|
|
800 |
8.2916 |
Si–O |
|
|
|
820 |
8.4988 |
C≡C |
|
1.20 |
|
891 |
9.23478 |
C≡N |
|
1.15 |
|
941 |
9.753 |
N≡N |
|
1.10 |
|
946 |
9.8048 |
N≡N |
|
|
N2 |
965 |
10.0018 |
C≡C |
|
1.20 |
Acetylene, HC≡CH |
1072 |
11.111 |
C≡O |
|
1.13 |
|
Table 1823c. Mean bond energies of some materials.
Mean bond energy |
Temperature (°C) |
Substance |
kJ/mol |
eV/bond |
|
1.915 |
|
Se79Te20Sb1[2] |
|
1.919 |
|
Se78Te20Sb2[2] |
|
1.930 |
|
Se76Te20Sb4[2] |
|
1.943 |
|
Se74Te20Sb6[2] |
|
1.974 |
|
Se70Te20Sb10[2] |
|
2.257 |
|
Ge17Se83 [1] |
|
2.297 |
|
Ge17Se80Sb3[1] |
|
2.341 |
|
Ge17Se77Sb6[1] |
|
2.388 |
|
Ge17Se74Sb9 [1] |
|
2.438 |
|
Ge17Se71Sb12[1] |
|
2.491 |
|
Ge17Se68Sb15[1] |
221.35 |
2.294 |
|
Se79Te20Sb1[2] |
221.70 |
2.2978 |
|
Se78Te20Sb2[2] |
222.40 |
2.305 |
|
Se76Te20Sb4[2] |
223.10 |
2.312 |
|
Se74Te20Sb6[2] |
224.50 |
2.327 |
|
Se70Te20Sb10[2] |
377 |
3.907 |
|
Bi2Te3 |
407 |
|
|
Sb2Te3 |
422 |
|
0 |
Bi2Se3 |
[1] Parikshit Sharma, V. S. Rangra, S. C. Katyal , Pankaj Sharma, Compositional dependence of physical parameters in Ge17Se83-xSbx (x = 0, 3, 6, 9, 12, 15) glassy semiconductors, Optoelectronics And Advanced Materials – Rapid Communications, 1 (8), 363 – 367 (2007).
[2] Balbir Singh Patial, Neha, Nagesh Thakur, S. K. Tripathi, Study of the Physical Properties with Compositional
Dependence of Sb Content in Se-Te-Sb Glassy System
, International Journal of Advanced Research in Physical Science (IJARPS), 1 (7), 2014, 9-16.
[3] N. Bai, F.R. Liu, X.X. Han, Z. Zhu, F. Liu, X. Lin, N.X. Sun, A study on the crystallization behavior of Sn-doped amorphous
Ge2Sb2Te5 by ultraviolet laser radiation, Applied Surface Science 316 (2014) 202–206.
[4] J. Bicerano and S. R. Ovshinsky, J. Non-Cryst. Solids 74, 75 (1985).
|