TEM Imaging of Stacking Faults

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TEM Imaging of Stacking Faults

In kinematic approximation, by introducing a phase shift (α) at a stacking fault, the TEM imaging intensity (|A_g|²) is given by,

        TEM Imaging of Stacking Faults -------------------- [1996a]
where,
          α -- (= 2πg·R) The phase shift at the stacking fault;
          R -- The displacement of the crystal below the stacking fault relative to that above it;
          s -- The deviation parameter;
          z -- The stacking fault depth.

Equation 1996a indicates that the visibility of the stacking fault is dependent on α, s, and z.

Figure 1996 shows stacking faults in the silicon substrate, which are defects where the normal stacking sequence of atomic planes is disrupted. These types of defects can have a significant impact depending on their proximity to device features, such as the source and drain regions of a transistor. If a stacking fault crosses a p-n junction, it can increase leakage current across the junction, potentially causing device failure.

$Diffraction contrast imaging of dislocations and stacking faults: (a) Example of a dislocation in the silicon substrate. (b) Example of a stacking fault in the silicon substrate$

Figure 1996. Diffraction contrast imaging of dislocations and stacking faults: (a) Example of a dislocation in the silicon substrate. (b) Example of a stacking fault in the silicon substrate. [1]

[1] Raghaw S. Rai and Swaminathan Subramanian, Role of transmission electron microscopy in the semiconductor industry for process development and failure analysis, Progress in Crystal Growth and Characterization of Materials, 55, pp.63-97, 2009.

Practical Electron Microscopy and Database

An Online Book, Second Edition by Dr. Yougui Liao (2006)

TEM Imaging of Stacking Faults