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The lattice constants of cobalt silicides can be found elsewhere in the book. Figure 4491a shows planview TEM images and the corresponding indexed SAED (selected-area electron diffraction) patterns of (a and b) 400 °C, (c and d) 500 °C, and (e and f) 950 °C CoSix, formed by annealing Co/a-Si nanodot on SiGe substrate. The diffraction rings as marked in the three diffraction patterns were from polycrystalline CoSi2 and CoSi, respectively. The very bright diffraction spots in Figure 4491 (b) and (d) were from (0 0 1) SiGe substrate.
Figure 4491a. Planview TEM images and the corresponding indexed SAED patterns of (a and b) 400 °C, Figure 4491b shows plan-view TEM image of the as-deposited CoSi2 film prepared from the composite target using a DC discharge power. The inset shows an electron diffraction pattern of the film. This film was perfectly amorphous without any nanocrystals. Figure 4491b. Diffraction pattern of amorphous CoSi2 film [2].
Figure 4491c shows the arrangement of atoms on CoSi2(200) (a) and CoSi(111) (b). Figure 4491c. Arrangement of atoms on CoSi2(200) (a) and CoSi(111) (b) [3]. Figure 4491d shows indexed SAED patterns of 360 °C annealed Co(23 nm)/Au(4 nm)/(001) Si samples, where a mixture of CoSi2 and CoSi phases was formed after annealing.
Table 4491. More diffraction patterns of cobalt disilicides.
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