Electron microscopy
 
Electron Diffraction of Erbium Silicides
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Table 977. Electron diffraction of erbium silicides.

Erbium silicides Electron diffraction
ErSi2-x Orientation relationship of (10-10)YbSi2-x/(11-2)Si
Diffraction pattern of a planview TEM sample of ErSi2-x on Si(001) annealed at 700 °C. The extra spots are due to ordered vacancy structure are marked by "O". [1]
Orientation relationship of (10-10)YbSi2-x/(11-2)Si
Schematic plots showing: (a) the ordered vacancy structure, (b) a simulated electron diffraction pattern viewed along the [1-100] silicide direction and (c) three-dimensional vacancy ordering structure. The vacancy positions are indicated as empty squares. [1]
Orientation relationship of (10-10)YbSi2-x/(11-2)Si
Diffraction pattern of a cross-sectional TEM sample of ErSi2-x on Si(001) annealed at 700 °C. [1]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 


[1] W.C. Tsai, H.C. Hsu, H.F. Hsu, L.J. Chen, vacancy ordering in self-assembled erbium silicide nanowires on atomically clean Si(001), Applied Surface Science 244 (2005) 115–119.

 

 

 

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