Table 981. TEM imaging of gadolinium silicides.
Gadolinium Silicides 
TEM images 
GdSi_{x} 
Gd thin film deposited on (111)Si annealed at 150 °C. There is an amorphous interlayer (ainterlayer) and nucleation of the crystalline silicide. [1] 
GdSi_{2x} 
Gd/Si(111) samples annealed at 600 °C for 1 min. [1] 
Planar stacking faults, on {1010} planes, along three <1210> and <0001> directions in epitaxial GdSi_{2x} thin films viewed along the [0001] direction. [2] 
Coexistence of epitaxial H(hexagonal)GdSi_{2x} and polycrystalline O(orthorhombic)GdSi_{2} in a Gd/(001)Si sample annealed at 600 °C: (a) polycrystalline OGdSi_{2} rings and two sets of epitaxial HGdSi_{2x} (see page2036_f), with orientation relationships between HGdSi_{2x} and (001)Si, which are (A) (1100)GdSi_{2x}/(001)Si with [0001]GdSi_{2x}/[220]Si and (B) (1100)GdSi_{2x}/(001)Si with [1120]GdSi_{2x}/[220]Si. The two sets of GdSi_{2x} are crystallographically equivalent with one rotating 90° relative to the other around the common [1100]GdSi_{2x} axis. Two perpendicular
orientations with the same Moire fringe spacings, indicating that the epitaxial films tend to orient with two different azimuthal orientations rotated by 90° with each other. [1] 
[1] J.C. Chen, G.H. Shen, L.J. Chen, Interfacial reactions of Gd thin films on (111) and (001) Si, Applied Surface Science 142 (1999) 291–294.
[2] Lih J. Chen, Silicide Technology for Integrated Circuits, 2004.
