Practical Electron Microscopy and Database

Chapter/Index: Introduction | A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z | Appendix

Electron Diffraction of Palladium Silicides

Table 984. Electron diffraction of palladium silicides. Palladium silicides Electron diffraction patterns PdSi [30-1] PdSi zone axis from a Pd/(111)Si sample annealed at 875 °C for 1 h. Adapted from [1] [2-3-1] PdSi zone axis from a Pd/(111)Si sample annealed at 900 °C for 30~120 s. Adapted from [1] Pd2Si Overlapping [0001]Pd2Si/[111]Si diffraction pattern, and the indexed pattern of the electron diffraction pattern. The sample was annealed at 800 °C for 1 h. Adapted from [1] Overlapping [1-100]Pd2Si/[1-11]Si diffraction pattern, and the indexed pattern of the electron diffraction pattern. The sample was annealed at 900 °C for 1 h. Adapted from [1]                   [1] J.F. Chen, L.J. Chen, Transmission electron microscopy and X-ray diffraction investigation of phase formation and transition between Pd2Si and PdSi in Pd thin films on (1ll)Si, Materials Chemistry and Physics, 39 (1995) 229-235.