Electron microscopy
  
XRD of Nickel Silicides
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Table 987. XRD of nickel silicides.

Nickel silicides XRD profiles
NixSiy Nickel silicides
From [1] 
Three-dimensional (3-D) rendering of the in situ X-ray diffraction measurements during annealing of a 15 nm Ni film deposited on p-doped poly-Si (3 °C/s)
Three-dimensional (3-D) rendering of the in situ X-ray diffraction measurements during annealing of a 15 nm Ni film deposited on p-doped poly-Si (3 °C/s). [2]
Three-dimensional (3-D) rendering of the in situ X-ray diffraction measurements during annealing of a 15 nm Ni film deposited on p-doped poly-Si (3 °C/s)
In situ X-ray diffraction measurements during annealing of a 15 nm Ni film deposited on p-doped poly-Si (3 °C/s). [2]
Nickel silicides
In situ XRD measurement during annealing of a 15 nm Ni film deposited on (a) p-doped and (b) n-doped SOI substrate. [2] 
NiSi Coefficient of thermal expansion (CTE) (orthorhombic structure) [3]:
a = 0.5187 − 1.807 × 10−5T + 6.026 × 10−8T2 − 2.709 × 10−11T3 (nm)
b = 0.3286 + 2.977 × 10−5T − 6.557 × 10−8T2 + 2.915 × 10−11T3 (nm)
c = 0.5626 − 1.779 × 10−5T + 5.727 × 10−8T2 − 2.546 × 10−11T3 (nm)

 

 

 

 

 

 

 

 

 

 

 

 

[1] Hou-Yu Chen, Chia-Yi Lin, Min-Cheng Chen, Chien-Chao Huang, and Chao-Hsin Chien, Nickel Silicide Formation using Pulsed Laser Annealing for nMOSFET Performance Improvement, Journal of The Electrochemical Society, 158 (8) H840-H845 (2011).
[2] Lih J. Chen, Silicide Technology for Integrated Circuits, 2004.
[3] D. F. Wilson, O. B. Cavin [Scripta Metall. Mater. (Netherlands), 26, p.85, (1992).

 

 
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