Chapter/Index: Introduction | A |
B |
C |
D |
E |
F |
G |
H |
I |
J |
K |
L |
M |
N |
O |
P |
Q |
R |
S |
T |
U |
V |
W |
X |
Y |
Z |
Appendix
Electron Diffraction of Titanium Silicides
| Table 994. Electron diffraction of titanium silicides.
| Titanium silicides |
Electron diffraction |
| Ti5Si3 |
![Diffraction pattern of [110] Ti5Si3](image2/992b.PNG)
Diffraction pattern
of [110] Ti5Si3, formed from a Ti/Si sample annealed at 450 °C
for 2 h. [2] |
| TiSi2 |
![A typical [100] selected area electron-diffraction pattern of a defective C49-TiSi structure along [100]axis.](image2/992a.PNG)
Typical [100] selected area electron-diffraction pattern of a defective C49-TiSi2 structure along [100] axis [1] |
[1] Z. Ma, L.H. Allen, Kinetic mechanisms of the C49-to-C54 polymorphic transformation in titanium disilicide thin films: A microstructure-scaled nucleation-mode transition,
Phys. Rev. B, vol.49 (1994) p.13501–11.
[2] Lih J. Chen, Silicide Technology for Integrated Circuits, 2004.
|
