Table 994. TEM images of cobalt silicides.

Cobalt silicides	TEM images
CoSi2	Residual defects formed in ion implanted silicon can be reduced by silicide formation. Figures above show the removal of end-of-range defects by CoSi2 formation in BF+2-implanted (001)Si for samples annealed at: (a) 700°C and (b) 800°C. [1]
	Epitaxial CoSi2 is preferentially nucleated at the Si surface of the lateral encroachment which shows a (111)Si plane due to the lowest interface energy of (111)CoSi2/(111)Si. Before the epitaxial CoSi2 grains fully merged to form a continuous CoSi2 layer, excessive Si atoms diffuse from the Si substrate to the outer layer, thus resulting in the void. [3]
	The CoSi2 facets are normally on {111} and {001} Si planes, which have lower free energy than those of other interfaces. For instance, in the figures above, the ball-and-stick models of CoSi2/(111)Si interface with epitaxially (type A) and twin related (type B), respectively, view is down [-110].  [1]
	Co/SiOxNy/Si structure annealed at 500 °C for 1 min in ambient N2. [2]

[1] Lih J. Chen, Silicide Technology for Integrated Circuits, 2004
[2] Jaesang Lee, Keunwoo Lee, Dongock Kim, Taeyong Park, Honggyu Kim, and Hyeongtag Jeon, Epitaxial CoSi₂ formation using an oxynitride buffer layer, J. Mater. Res., 24, 8, 2009.
[3] Jeong Soo Byun, Jeong Min Seon, Kang Shik Youn, Hyunsang Hwang, Jin Won Park and Jae Jeong Kim, Defect Generation during Epitaxial CoSi2 Formation Using Co/Ti Bilayer on Oxide Patterned (100)Si Substrate and Its Effect on the Electrical Properties, J. Electrochem. Soc. 143 L56 (1996).