Practical Electron Microscopy and Database

Chapter/Index: Introduction | A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z | Appendix

Helium (He) Sputtering

The stoichiometry of the surfaces of multicomponent samples can be changed after He (helium) ion milling. For instance, Ta2O5 surface after He milling had been studied using Auger electron spectroscopy (AES) technique. Figure 1166 shows the Ta/O ratio at sputtered surfaces as a function of sputtering angle. Figure 1166. Ta/O ratio measured at dierent sputtering angles, after obtaining steady state values. [1]                 [1] B. Baretzky, E. Taglauer, Surf. Sci. 162 (1983) 996.