InP
- Practical Electron Microscopy and Database -
- An Online Book -

http://www.globalsino.com/EM/  



 
This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
 

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Figure 2083 shows bandgap and chemical bond length for semiconductors used in visible LEDs (light emitting devices).

Bandgap and chemical bond length for semiconductors used in visible LEDs (light emitting devices)

Figure 2083. Bandgap and chemical bond length for semiconductors used in visible LEDs (light emitting devices). Adapted from [1]

Crystalline Si has the space group of Fd-3m (see in Table 2019) and the space group for GaAs and InP is F-43m. Both these space groups are simple face-centred cubic (fcc) lattices.

Table 2083a. Properties of InP crystals.

Energy Gap Eg at 0 K (eV)
1.344
Intrinsic resistivity ρi (Ωcm)
8.6 x 107
Intrinsic carrier concentration ni (cm-3)
1.3 x 107
Electron mobility µe (cm2V-1s-1)
≤5400
Hole mobility µh (cm2V-1s-1)
≤200
   

Table 2083b. Some surface energies (J/m2) of low-index surfaces of InP crystals. The types of reconstructions are indicated. (1x1) relaxed denotes an unreconstructed cleavage surface.

Solid
(100)
(110)
(111)
InP
0.99     β2(2 × 4)
0.88     (1 × 1) relaxed
0.99    (2 x 2) In vacancy

 

 

[1] Ponce, F. A. and Bour, D.P., Nature, 386, (1997) 351.

 

 

 

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