Chapter/Index: Introduction | A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z | Appendix
| ZnSSe-based/GaAs heterostructures have been becoming very important materials for blue-green light emitting diodes (LEDs) and lasers. However, the applications of these heterostructures are still limited by two main types of defects including dark line defects (DLDs) and dark patches. The dark patches are triangular in shape and form during device operation. Similar to DLDs, dark patches form from pre-existing defects.
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