Effect of Electron Dose on Radiation Damage/
Electron Dose Inducing Material Damage
in Bulk and at Sample Surface
- Practical Electron Microscopy and Database -
- An Online Book -

http://www.globalsino.com/EM/



 

 

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The typical electron dose (De) inducing atomic displacement in conducting bulk is from 103 and  104 C/cm2 [1]. Here, 1 electron = 1.6 x10-19 C. Some materials are able to withstand the >105 e-2 dose that a typical aberration-corrected high-voltage STEM probe provides, but beam damage is still one of the main issues for most materials in both biology and material science. Especially, point defects are mobile, and thus the defect and interface structures are less stable than the bulk material.

 

 

 

 

 

 

 

[1] R. F. Egerton, R. McLeod, F.Wang, M.Mala, Basic questions related to electron-induced sputtering in the TEM, Ultramicroscopy 110 (2010) 991–997.

 

 

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