Fraction of Transmitted Electrons Depending on Sample Thickness - Practical Electron Microscopy and Database - - An Online Book - |
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Microanalysis | EM Book http://www.globalsino.com/EM/ | ||||||||
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As an examlpe of interaction between incident electrons and matters, Figure 1183a shows the fractions of the transmitted (ηT) and backscattered (ηB) electrons from some Al films with an incident electron beam at accelerating energies of 15 keV and 20 keV, respectively. Those fractions are thickness-dependent. The data was obtained with Monte Carlo calculations. [1] It is reasonable that the fraction of transmitted electrons at higher voltages (20 keV) is much larger than that at lower voltages (15 keV).
Figure 1183b shows the fraction of transmitted electrons at different accelerating voltages of incident electron beam obtained by Monte Carlo modeling from some materials.
Figure 1183c shows the fraction of transmitted electrons as a function of the thickness, t, for Al and Au films at different energies of the incident electrons.
[1] R Shimizu, Y. Kataoka, T. Ikuta, T. Koshikawa and H. Hashimoto, A Monte Carlo approach to the direct simulation of electron
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