Electron Beam Induced Current (EBIC)
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Electron beam induced current (EBIC) was the first application of charging-induced effects in SEM. This generated current is formed by the separation of electron-hole pairs excited by a high energy e-beam (electron-beam) irradiating on semiconductor devices. For instance, the distinction at cross-sectional surfaces between n- and n+ regions was observed on a Si (silicon) wafer [1]. EBIC measurements demonstrated that shallow states exist at Σ3 coincidence site lattice (CSL) grain boundaries. [2]

 

 

 

 

 

[1] Kato, T., Matsukawa, T., Koyama, H., Fujikawa, K. and Shimizu, R. (1975) Scanning electron microscopy of charging effect on silicon. J. Appl. Phys., 46, 2288 - 2292.
[2] A. Buis, Y. S. Oei and F. W. C. Schapink: Trans. Japan Inst. Metals Suppl. 27 (1986) 221–228.

 

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