Chapter/Index: Introduction | A |
B |
C |
D |
E |
F |
G |
H |
I |
J |
K |
L |
M |
N |
O |
P |
Q |
R |
S |
T |
U |
V |
W |
X |
Y |
Z |
Appendix
Comparison between Nickel Silicides and Cobalt Silicides
| There are mainly two factors which contribute to reduction of Si consumption when moving from CoSi2 to NiSi contacts:
i) Lower resistivity of NiSi. As shown in the tables at page2036_a, such NiSi films show the same sheet resistance with thinner films than CoSi2 films, therefore less Si is consumed during its formation.
ii) Lower density of Si in NiSi compared to CoSi2.
Figure 989. Schematic illustration of the reduction of Si consumption when
using NiSi instead of CoSi2. [1] |
[1] Lih J. Chen, Silicide Technology for Integrated Circuits, 2004.
|
