Chapter M |
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| m point group |
m symmetry |
| m-3 point group |
m-3m point group |
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M4/M5 ratio of EELS white lines |
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| M-family of characteristic X-ray emission |
M-planes of sapphire crystal |
| Major, minor, & trace elements in materials |
Apple products: iPhone, iPad, & iPod touch, Apple watch & MacBook |
Maps |
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Lattice-fringe visibility maps |
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| Maclaurin series |
Macroscopic and microscopic fields in EM imaging systems |
Magnesium (Mg) |
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EDS measurements of magnesium (Mg) |
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EELS measurements of magnesium (Mg) |
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Lead magnesium niobate [Pb(Mgm/nNbn-m/n)O3, PMN] |
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MgS |
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MgSe |
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MgB2 |
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MgO |
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Mg-based metallic-glass alloys |
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Spinel (MgAl2O4) |
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Differences between round and multipole lenses |
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Multipole design for Cs correctors in EMs |
Magnetic field |
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Measurement of magnetic field using off-axis electron holography |
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Magnetic field lines |
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Magnetic induction |
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Electrons passing through magnetic lens |
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Electron motion in electrostatic and magnetic fields |
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Convex electromagnetic lens |
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Focal length of magnetic lenses |
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Image helical rotation and inversion due to magnetic field |
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Lorentz force of moving electron in magnetic field |
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Aberrations in the electromagnetic round lenses |
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Magnetic polepieces |
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Right-hand rule of Lorentz force vector |
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Rotationally symmetrical electron lenses/magnetic field |
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EEL spectra/image shift on camera caused by magnetic objects |
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Magnetic prism in GIF camera |
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Magnetic field creep |
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NiFe |
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FeCoN |
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TEM analysis of magnetic materials |
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Astigmatism corrections of condenser and objective lenses in TEM for magnetic materials |
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Coma-free alignment in TEM for magnetic materials |
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Paramagnetic materials |
Magnification of microscopes |
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Magnification versus camera length |
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Magnification and its adjustment in TEM |
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Highest useful magnification of microscopes |
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Magnification of electron microscopes |
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High magnification TEM observations |
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Optical condition for high-magnification imaging in TEM |
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Correction of magnification & its aspect ratio of TEM images |
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Calibration of magnification and scale bar in TEM |
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| Main and satellites reflections in electron diffraction patterns |
Manager/director of electron microscope labs |
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EELS of Mn (manganese) |
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Valence states of manganese |
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(HAADF) STEM images of manganese (Mn)
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Zr1-xMnxO2 |
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LaMnO3 |
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TMO6 (e.g. MnO6) octahedral lattice |
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| Manually correctable aberrations |
Manufacturers/companies producing FIB & EM instruments |
| Marginal ray focus |
Market: EM companies in stock markets |
| Martensitic transformation |
Martensite |
Mask |
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Hole mask/entrance mask in GIF system |
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| Mass absorption coefficients of X-rays |
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| Mass of electrons at accelerating voltage in vacuum |
Matrix of the seven crystal families in real and reciprocal spaces |
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Mass collision (ionization) stopping power |
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Mass radiative stopping power |
Mass-thickness effects |
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Mass-thickness effects on EDS signal/intensity |
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Mass-thickness effects on EELS signal/intensity |
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Mass-thickness contrast in TEM images |
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Mass-thickness contrast in STEM Images |
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| Methanol applied in TEM sample preparation |
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Materials |
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Interaction between incident electrons and matters |
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Materials used for electron gun |
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Table of structural properties of materials |
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Crystalline materials |
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| Maximizing EDS intensity/counts |
Maximum achievable sample-tilt-angle in TEM |
| Maximum-entropy deconvolution |
Maximum entropy method |
| Maximum (phase-)contrast in (HR)TEM imaging (with Scherzer defocus) |
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| Matlab: GNU Octave
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fprintf in Octave |
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Maximum escape depth |
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Maximum escape depth of secondary electrons |
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Maximum escape depth of X-rays |
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| Maximum ranges of primary electron beam in EMs |
Maxwell’s equations |
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Mean free path of X-rays |
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Mean free path of incident electrons in EMs (table in page4623) |
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Mean free path of electron elastic scattering |
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Mean free path of Auger electrons |
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Electron inelastic mean free path of elements and compounds |
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TEM sample thickness for STEM and EELS ~ Mean Free Path |
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Plasmon mean free path
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| Mean ionization energy (potential) of complex materials |
Mean filters for noise reduction |
| Mean-square atomic displacement |
Mean time to failure (MTTF) to electromigration |
| Mean energy loss/average energy loss
per inelastic electron collision |
Mean time between failures (MTBF) to electromigration |
| Medium range ordering (MRO) in materials |
Median time to failure (MTTF) to electromigration |
Mechanical |
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TEM sample preparation method of mechanical polishing + ion milling |
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Mechanical properties of materials |
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EELS ZLP broadening due to mechanical vibration |
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STM holders for EMs |
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Peltier mechanical cooling |
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Compressive/mechanical pumps |
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Mechanical, electron and ion probe diameters |
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Specimen (stage) drift/instability/movement in TEMs/STEMs |
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Mechanical properties of silicides |
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Contribution of mechanical vibrations to diffractograms |
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| Mechanisms and processes of secondary electron generation |
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| Meissner effect |
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Eutectic point |
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Melting point of nano-structures |
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Melting/temperature rise of materials in FIB processes |
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Bonding energies and melting temperatures of substances |
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Young's moduli and melting temperature |
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Melt-spinning |
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Relationship between bond energy and melting point |
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Crystal percentage in metallic glasses made from melts |
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Cooling rate to make metallic glasses from melts |
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Glass forming ability (GFA) from melts |
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Critical casting thickness for formation of metallic glass alloys from melts |
Memories |
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Ferroelectric random access memories (FRAMs) |
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Comparison between different memories |
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1T1C/2T2C architectures in memories |
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Failure analysis of memories |
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Nonvolatile electrical memory devices |
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| Milling rate of materials in FIB |
Milling rate of materials with argon ion polishing |
| Mercury (Hg) |
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| Merohedral point groups |
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Oxygen vacancy in metal oxides |
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Thermodynamic stability of metal gate oxides in ICs |
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| Metalorganic chemical vapor deposition (MOCVD) |
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Free-electron and interband transition metals |
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Transition-metal complexes |
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Metals in periodic table |
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Metalloids in periodic table |
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Metal-insulator transition (MIT) with change of temperature |
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Free-electron metals |
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Metal gate |
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Refractory metal silicides in ICs |
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Critical casting thickness for formation of metallic glass alloys from melts |
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Comparison between ionic, covalent, and metallic materials |
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TEM analysis of metallic materials |
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fcc-type packing short range ordering of metallic glass |
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Free volume in metallic glasses |
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Structural relaxation of metallic glasses at elevated temperatures |
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Free volume change of metallic glasses at elevated temperatures |
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HRTEM images & electron diffraction of amorphous metallic glasses |
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Glass transition of metallic glasses |
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Crystallization of metallic glasses |
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Defects in metallic glasses |
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Electrical resistivity/resistance of metallic glass depending on temperature |
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Plastic deformation of metallic glasses |
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Phase separation in metallic glasses |
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Crystal percentage in metallic glasses made from melts |
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Cooling rate to make metallic glasses from melts |
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Metals |
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Properties of metal interconnects and metallization selection for ICs
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Metallization in IC fabrication |
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IC failure induced during metal etching |
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| Metrology tools for semiconductor industry |
Miller-Bravais indices |
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Determination of Miller indices of planes |
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Minerals |
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Gaudefroyite (Ca4Mn3+2.5(BO3)3(CO3)O2.25(OH)0.75) |
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Iron (Fe) |
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| Microdiffraction pattern/shadow image/Ronchigram in STEM |
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Microelectronics |
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Vacuum requirements of EMs for microelectronics industry |
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Microscopies |
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Fluctuation microscopy |
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| Microtome for specimen-sectioning |
Microwave |
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Microwave semiconductor devices |
Minimum |
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Minimum attainable probe size in STEM |
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Minimum (phase-)contrast in (HR)TEM imaging with Gaussian defocus |
Minimum detectable mass (MDM) |
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Sensitivity/detection limit/minimum detectable mass of EELS |
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Minimum detectable limit (mass)/minimum mass fraction (MMF) of EDS |
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| Mirror planes (m, σ) in crystals |
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Lattice-mismatched epitaxial alloy |
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Misfit dislocation: Lattice mismatch versus misfit dislocation separation |
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Misfit layer chalcogenides |
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Modulation/satellite reflections due to mutually commensurate mismatch |
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Misfit strain |
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| Missing pattern failure in IC chips |
Mixed dislocations |
| mm2 point group |
mmm point group |
Mobile devices |
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ICs in mobile devices |
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Mobile device/hardware |
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Standby power for mobile devices |
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| Mobile charges in SiO2 field insulator in MOS structures |
Möllenstedt–Düker biprisms in optical and electron microscopes |
Mobility |
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Electromigration transport mobility of ions in materials |
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Electrons/holes mobility & current versus strain in materials |
Model |
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Models of SEM/TEM/STEM systems |
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Models of FIB systems |
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Model for TEM samples for EM simulations |
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Modelings & simulations |
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| Models for simulation in EM techniques |
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Molecules |
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EELS of gaseous atoms and molecules |
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EELS Measurement of Molybdenum (Mo) |
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EDS/WDS measurements of molybdenum (Mo) |
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MoSix |
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Molybdenite (MoS2, molybdenum sulfide) |
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| Momentum space |
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Momentum transfer |
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Momentum/energy transfer from charged particle to matter |
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Momentum transfer of electron due to collision with atoms |
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Momentum transfer of incident electrons after atomic ionization/energy loss |
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Young’s fringes produced by TEM image shift (with and without monochromator) |
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Monochromatic electron source in EMs |
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EELS energy resolutions improved by monochromators |
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Disadvantages of monochromation system in EMs |
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2 point group |
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m point group |
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2/m point group |
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EM simulation of integrated circuits |
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| Moore’s law |
Morphological image processing |
Most |
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Close packed (most densely packed) planes and directions in crystals |
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Most possible scattering angle of incident electrons for atomic ionization/energy loss |
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Most probable energy (MPE) of secondary electron emission |
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Most probable distance between neighbouring
atoms |
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| Motif/basis/lattice point |
Motion of electron in electrostatic and magnetic fields |
| Mott differential cross section of elastic scattering |
"Mottling" visible in FIB and Ar-milled specimens |
Multiple |
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Multiple linear least squares (MLLS) fitting in EELS analysis |
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Multiple linear least-squares (MLLS) peak fitting for EDS analysis |
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EELS measurement through the multiple layers |
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Multiple/plural scattering of electrons |
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Plural scattering of electrons |
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Multiple/plural scattering in EELS |
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Multiple scattering corrections of EELS |
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Thin TEM sample to avoid multiple/plural scattering |
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Multiple scattering of electrons in EMs |
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Double/multiple diffraction in electron diffraction patterns |
Multislice |
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Multislice simulation (MS) of TEM images |
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Elastic-inelastic multislice simulation for EELS |
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| Mutual Correlation Function (MCF) |
Mα X-ray emission |
