Chapter E |
Abundance in Earth's Crust of the elements |
Eccentricity |
Edge |
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Edge dislocations |
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EELS edge onset |
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EELS background versus edge onset |
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TEM contrast/fringes at interface/edge between two materials |
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Prewitt edge filter (operator) |
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Sobel edge filter (operator) |
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EDS (Energy Dispersive X-ray Spectra) |
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History of EELS technique |
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Range of energy losses of various EELS signals |
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Operation of EELS |
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Sensitivity/detection limit/minimum detectable mass of EELS |
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Density-functional theory (DFT) simulations of EELS profiles |
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Inelastic scattering from outer-shell electrons shown in EELS profile |
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EELS of rare gas solids |
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Inner-shell excitation in EELS |
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Energy dispersion in EELS |
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Elastic-inelastic multislice simulation for EELS |
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Sextupole lens application in GIF/EELS systems |
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Collection efficiency of EELS |
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Energy stability of EELS |
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Data cube in energy-filtered TEM (STEM) based on EELS |
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EELS spectrum energy drift |
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Spatially resolved EELS (SREELS) |
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General thickness requirements of TEM samples for EELS/EFTEM/STEM |
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Valence electron energy loss spectroscopy (VEELS) |
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Multiple/plural scattering in EELS |
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Unmeasurable energy loss in EELS |
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K-edge of 3d transition elements in EELS |
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EELS of alkali metals |
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Electrical resistivity of materials studied by EELS |
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Dependence of EELS/EFTEM on accelerating voltages of incident electrons |
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EELS edge onset |
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Objective lens versus EDS and EELS |
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Cross-section (probability) of inelastic scattering in EELS measurements |
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Dielectric-constant determination by EELS |
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Aberration in EELS imaging |
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EELS analysis of grain boundaries |
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Dispersion compensation EELS |
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Measurement of electron probe current with EELS spectrometer |
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Voltage of incident electrons for EELS measurements |
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Examples of theoretical interpretations of EELS profiles |
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EELS of gaseous atoms and molecules |
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EELS measurement in diffraction mode |
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Shutter used in EELS and EFTEM measurements |
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EELS & EFTEM measurements in aberration corrected TEMs |
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Electronic noise in TEM/STEM/SEM/EELS/EDS systems |
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Effects of chromatic aberration on EELS |
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Effects of defocus on EELS |
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EELS measurements in TEM imaging mode |
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Vibrational spectroscopy in EELS |
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EELS spectrum energy offset |
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EEL spectra/image shift on camera caused by magnetic objects |
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Drift & jump of EEL spectra or images |
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Angular dependence of inelastic scattering of electrons |
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Comparison between cathodoluminescence and EELS |
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Elemental characterization in physical analysis of IC failure |
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EELS intensity |
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EELS signal/intensity dependence on Z-(atomic) number |
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EELS signal/intensity affected by collection & convergence angles & apertures |
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Diffraction effects on EELS intensity |
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Factors affecting contrast/intensity of elemental measurements (EELS & EDS) |
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Ratio of the L3 to L2 white-line intensity for 3d/4d elements |
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Mass-thickness effects on measured EELS signal/intensity |
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Intensity and imaging comparison between elastic and inelastic scatterings |
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Single scattering EELS spectrum and its signal extraction |
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EELS: Comparisons with other techniques |
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Comparison between XAS and EELS |
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Comparison between EELS and AES |
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Comparison between TEELS (EELS) and REELS |
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Comparison between EDS and EELS |
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Comparisons between HRTEM and EELS techniques |
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Comparison between EFTEM and EELS mapping |
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Comparison between infrared spectroscopy and EELS |
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Comparison between low and high voltage EELS measurements |
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Background subtraction in EELS & EFTEM |
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Background variation in a single measurement |
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Background variation due to composition variation |
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Background variation due to thickness variation |
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Three window method for EFTEM/EELS mapping/quantification |
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Fourier–log deconvolution in EELS |
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Power-law fit: a background fitting model |
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Jump ratio in EELS measurement |
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Poisson distribution |
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EELS background versus edge onset |
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EELS limitations |
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Band structure (BS) methods used in EELS modeling |
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EELS applications |
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EELS analysis of ferroelectric materials |
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EELS analysis of high-k dielectric materials |
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EELS measurement through the multiple layers |
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EELS: three distinct groups of spectral peaks |
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Zero-loss peak |
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Low energy-loss peaks |
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High energy-loss peaks |
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Zero-loss filtering in EFTEM |
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Most possible scattering angle of incident electrons for atomic ionization/energy loss |
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Cross section of EELS K shell ionization |
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Core-loss peak broadening in EELS |
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Gaussian focus for core-loss EFTEM imaging |
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Crystalline phase analysis by EELS core-loss |
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Periodic table for EELS analysis |
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Elemental analysis by EELS and its limitations |
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|
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Determination of band gap from low-loss spectra in EELS |
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Study of electronic structure by low-loss EELS |
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Analysis of surface plasmon resonances affected by zero-loss peak and energy resolution |
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Plasmon measurement in EELS |
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Dielectric response/function of material valence electrons |
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Valence electron energy loss spectroscopy (VEELS) |
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Crystalline phase analysis by EELS plasmon |
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Plasmon energy and mean free path in EELS (table) |
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Theory on inelastic mean free path (IMFP) of electrons |
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Origin of change of plasmon energy |
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Determination of lattice parameters/strain by plasmon EELS |
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Applications of plasmon mode in EELS for nanostructures |
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Surface & bulk plasmon energy in EELS (theory) |
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|
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Broadening of EELS zero-loss peak due to phonon scattering |
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EELS ZLP broadening due to mechanical vibration |
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Zero loss extraction in EELS analysis |
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EELS resolution affected by asymmetry of zero-loss peak |
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Zero-loss alignment in EFTEM measurement |
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Analysis of surface plasmon resonances affected by zero-loss peak and energy resolution |
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Modeling of ELNES |
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Energy loss near edge structure (ELNES) mapping |
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Fine structure in EELS |
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Crystal orientation/diffraction effects on EXELFS of EELS signals |
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Coordination number study by ELNES & EXELFS |
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Study of nearest neighbor distances by EXELFS |
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Study of short range order (SRO) by EXELFS |
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Atomic structure determination by EXELFS |
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Study of electronic structure by EXELFS |
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Shape of energy-loss spectrum |
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Analysis of white lines in EEL spectrum |
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EELS analysis of nanometer sized objects |
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Effect of chromatic aberration on fine structure analysis using EFTEM |
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Multiple/plural scattering correction/removal in EELS |
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Peak(signal)-to-background ratio in EELS |
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EELS profile at interface between two thin films |
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Applications of EELS technique & comparison of different EELS techniques |
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Multiple linear least squares (MLLS) fitting |
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Ratio of the L3 to L2 white-line intensity for 3d/4d elements |
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Determination of band gap from low-loss spectra in EELS |
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Deep level states in band gap analyzed by EELS |
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Shoulder structure in EELS profiles |
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Determination of elemental ratio using EELS |
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Hartree-Slater model for electron excitation modeling & EELS |
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Electron beam damage monitored by EELS |
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Zero loss extraction in EELS analysis |
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Fourier transform of EEL spectra and images |
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Elemental bonding analysis using EELS |
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EELS artifacts/signal weakening due to misalignment of ZLP |
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EELS artifacts from ultra-thin TEM specimens - surface effects |
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Streaking artifacts in EELS images or profiles |
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EELS artifacts induced by high beam current |
EELS artifacts due to crystalline orientation |
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Electron channeling effects in EELS measurements |
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Diffraction effects on EELS intensity |
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Crystal orientation/diffraction effects on EXELFS of EELS signals |
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EELS calibration |
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Error of energy dispersion and its calibration in EELS measurements |
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Energy calibration of EELS profile |
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Optimization of experimental parameters/condition of EELS |
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Streak imaging technique in EELS measurements |
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Diffraction effects on EELS intensity |
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Examples of TEM sample thickness used for EELS |
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Examples of collection and convergence semiangles used in EELS |
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Dark current and its removal in EELS and EFTEM |
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Low electron beam current density to minimize specimen damage in EELS measurements |
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Conditions to minimize electron-beam-induced reduction of materials in EELS measurements |
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Degradation of EELS and EFTEM energy resolution due to binning |
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Minimum electron dose for sufficient EELS counts |
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“Effective” interaction volume for EELS measurements in TEM |
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Optimizing EELS acquisition |
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Difficulties/challenges of EELS measurements |
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EELS measurements with low-energy incident electrons |
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EELS detection of molecularly adsorbed species on surfaces |
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Carbon contamination effects on EELS measurements |
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Signal-to-Noise Ratio (SNR) in the EELS Spectrum |
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Qualitative interpretation of EELS spectra |
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Optimized electron beam current for EELS/EFTEM measurements |
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No GIF images/spectra: troubleshooting |
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Gain normalization for EELS measurement |
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Simultaneous EELS and EDS acquisition |
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Comparison of data acquisition times of various techniques |
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Fourier-log method for EELS deconvolution |
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Fourier-ratio method for EELS deconvolution |
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Deconvolution for noise reduction in EEL spectra |
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EELS energy resolution improvement by deconvolution (energy spread of beam) |
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Multiple linear least squares (MLLS) fitting |
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|
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Richardson-Lucy deconvolution |
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Signal overlapping in EELS |
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Curved edge in EELS systems |
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Single-channel electron detector |
EELS spectrometer categories: Two types |
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Serial EEL spectrometer (SEELS) |
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Parallel EEL spectrometer (PEELS) |
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EELS energy resolution limited by geometric aberration |
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EELS detection limited by radiation damage |
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EELS energy resolutions affected by energy spreading of beam & improved by monochromators |
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Elemental analysis by EELS and its limitations |
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Delocalization in inelastic scattering |
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Delocalization of EELS measurements |
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Poor signal-to-noise-ratio for EELS of nanostructures |
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Accuracy of EELS measurement |
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Selection of energy windows on accuracy of mapping and quantification |
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Mass-thickness effects on EELS signal/intensity |
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Areal Density (atoms per unit area) |
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Depth sensitivity of REELS & Dependence of depth on primary electron beam energy/incident angle/collection angle |
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Comparison between TEELS (EELS) and REELS |
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EELS resolution affected by beam broadening in TEM specimen |
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Spatial resolution of EFTEM mapping affected by collection angle |
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Spatial resolution of EFTEM mapping affected by chromatic aberration |
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Spatial resolution of EFTEM/inelastic imaging/elemental mapping |
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Spatial resolution of EFTEM mapping affected by energy range |
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Spatial resolution of EFTEM mapping affected by spherical aberration |
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Spatial resolution of EFTEM affected by specimen thickness |
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Spatial resolution of EELS in STEM mode |
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EELS resolution affected by asymmetry of zero-loss peak |
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EELS spatial resolution depending on specimen thickness |
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Degradation of EELS spatial resolution due to specimen drift |
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Specimen thickness extraction by Kramers-Kronig sum rule |
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Dependence of EELS signal on TEM specimen thickness |
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Energy loss of incident electrons depending on sample thickness |
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Analysis of white lines in EEL spectrum (e.g. L3/L2 ratio) |
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Analysis of valence states by white-lines in EELS |
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L2,3 edges of EELS: white lines for 3d transition metals and their alloys |
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L2,3 Edges of EELS: White Lines for 4d Transition Metals and Their Alloys |
Efficiency
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Efficiency of failure analysis in ICs |
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Collection efficiency of EELS |
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Data cube in energy-filtered TEM (STEM) based on EELS |
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EFTEM operation |
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Thickness requirements of TEM samples for EFTEM |
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Energy filtered electron diffraction/electron spectroscopic diffraction (angular) |
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Spatial drift correction in EFTEM imagings |
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EFTEM imaging of aluminum |
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Spectrum focus adjustment in EFTEM |
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Spatial resolution of EFTEM/inelastic imaging/elemental mapping |
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Artifacts in EFTEM images |
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Iso-chromatic imaging in EFTEM |
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Chemical shift detection of elements by EELS and EFTEM |
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Non-isochromaticity of energy filter |
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Correction of electron optical aberrations in EFTEM |
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EFTEM system and operation principle |
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Correction of magnification & its aspect ratio of TEM images |
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Zero-loss alignment in EFTEM measurement |
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Achromaticity correction in EFTEM |
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Image distortion correction in FETEM |
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Gaussian focus for core-loss EFTEM imaging |
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Thickness correction of EFTEM and EELS measurements |
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Vacuum range/efficiency & pump combination
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eg & t2g symmetries/states |
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Elastic imaging |
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Difference of focus depth for inelastic (core-loss EFTEM) and elastic imaging |
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Elastic scattering of incident electrons |
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High angle elastic scattering of ions |
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Intensity and imaging comparison between elastic and inelastic scatterings |
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Elastic cross-section of a complex material |
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Mott differential cross section |
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Energy transfer in elastic scattering |
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Elastic scattering of incident electron with an atomic nucleus |
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Elastic scattering of electrons |
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Low angle elastic scattering and coherence in TEM |
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Angular dependence of elastic scattering of electrons |
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Elastic scattering angle & diffraction angle |
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Dependence of elastic scattering on atomic number |
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Mean free path of electron scattering (elastic and inelastic) |
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Mean free path of elastic scattering |
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Elastic-inelastic multislice simulation for EELS |
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Lenz model for elastic scattering distribution simulation
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Elastic relaxation due to TEM-specimen thinning |
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Electric field |
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Electric field in electron source/gun |
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Built-in electric field/potential at material surface due to electron irradiation |
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Measurement of electric field using off-axis electron holography |
|
Electric displacement |
|
Electric technology |
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Electrical
|
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STM holders for EMs |
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TEM/STEM holders for in-situ electrical biasing |
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Electrical failure analysis (EFA) |
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Electrical overstress (EOS) failure mechanisms |
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Electrical resistivity/resistance |
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Table of electrical resistivity/conductivity of materials |
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Effect of grain boundary on electrical properties |
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Electrical properties of silicides |
|
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High voltage fluctuation/stability in microscopes |
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Stability of lens currents in EMs |
|
|
Void formation and circuit opening due to electromigration in ICs |
|
Short circuit failure due to electromigration |
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Electromigration resistance induced by alloying |
|
Activation energy for electromigration (EM) |
|
Electromigration (EM) diffusion of copper |
|
Grain boundary diffusion mechanism of electromigration in interconnects in ICs |
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Interfacial diffusion mechanism of electromigration in interconnects in ICs |
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Retarding electromigration |
|
Grain size dependence of electromigration-induced failures |
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Mean time to failure (MTTF) |
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Median time to failure (MTTF) to electromigration |
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Mean time between failures (MTBF) to electromigration |
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Time to electromigration-induced failures |
|
In situ SEM observation of electromigration |
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Oxygen vacancy migration induced by voltage |
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Electron wind force |
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Electromigration transport mobility of ions in materials |
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Current density threshold causing electromigration |
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Electron traps in electron microscopy (EM)-related systems |
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Periodic table for electron affinity |
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Properties of accelerated electrons |
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Electron channelling |
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Valence electrons |
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Radius of path of electrons/charged particles in a magnetic field |
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Comparison between X-rays and energetic moving electrons |
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Electron atomic scattering factors |
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Wave properties of charged particles |
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Interaction between incident electrons and matters |
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Core electrons |
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Electron density (in solids) measured by EELS |
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Mechanical, electron and ion probe diameters |
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Camera length in EBSD |
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Kikuchi lines in EBSD |
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Sample preparation for EBSD analysis |
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Spatial resolution & depth sensitivity of EBSD |
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History of EBSD development |
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EBSD detector |
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Comparison between CBED and EBSD |
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EBSD pattern formation |
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Zone axes in EBSP for EBSD |
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Band identification in EBSD |
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Pattern center determination in EBSD |
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EBSD analysis |
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Application of EBSD |
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Grain boundary measurements with EBSD |
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Kikuchi pattern contrast of EBSD depending on amorphous layer on surface |
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Strain/stress analysis using EBSD |
Electron beam (e-beam) |
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Effects of electron beam current/intensity changes |
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Electron beam convergence angle and coherence |
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Wave function of focused probe in STEM/SEM |
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Electron dose of electron beam |
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Incident electrons interacting with electrons in solids |
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Incident electrons interacting with nucleus in solids |
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Gaussian distribution of electron beam intensity/probe tail |
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Tilt of electron beam in EMs |
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Variation of electron beam current in EM columns |
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Electron-beam-tilt-induced coma in TEM |
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Electron-beam-tilt-induced image displacement in TEM |
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Beam divergence effects on Fresnel fringes in TEM |
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Electron beam (EB) application to semiconductor failure analysis |
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Instability in accelerating voltage of electron beam |
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Electron beam lithography (EBL) |
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Comparison between FIB, electron beam and laser beam techniques |
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Electron beam flooding/beam shower to eliminate contamination effects in EMs |
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Attenuation of AES (Auger Electron Spectroscopy) electrons |
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Electron beam absorbed current (EBAC)/resistive contrast imaging (RCI) |
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Electron beam induced current (EBIC) |
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Amorphization of materials induced by e-beam Pt deposition |
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Charging enhanced electron/ion-beam-induced-deposition |
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Smallest structures obtained by dual beam SEM/FIB/STEM deposition |
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Instability/variation of electron gun emission |
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Stability of lens currents in EMs |
Electron crystallography |
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Electron crystallography of proteins |
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Electron capture detector (ECD) in EELS system |
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Backscattered electron detectors |
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Semiconductor detectors |
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Backscattered electron detector in TEM/STEM |
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Everhart-Thornley (ET) detector |
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Selected-area electron diffraction (SAED) |
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Diffraction analysis in TEM |
|
Intensity of diffracted electron beam in TEM |
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Comparison between X-ray (XRD) and electron diffractions |
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Broadening of diffraction peak & phonon-electron scattering |
|
Broadening of diffraction intensities depending on grain size |
|
Diffraction of thick TEM specimen |
|
Diffraction spots originated from multiple atoms |
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Relrod – a thin film diffraction effect in TEM |
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Number of diffraction spots formed on screen/detector in TEM |
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Precession electron diffraction (PED) |
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Diffraction intensity in precession electron diffraction |
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Diffraction contrast in TEM images |
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Electron diffraction formation: Bloch-wave approach |
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Advantages of electron diffractions |
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Diffraction & aberration |
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Diffraction analysis of small area or nanoparticles |
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TEM sample thickness determination through diffraction |
|
Probe shift in TEM system when switching between diffraction and other modes |
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Electron diffraction of face centred cubic (fcc) lattices |
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HRTEM imaging and electron diffraction of hexagonal symmetry |
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HRTEM and electron diffraction of crystals with trigonal symmetry |
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Diffraction intensity distribution in reciprocal lattices |
|
Overall electron diffraction and Kikuchi lines depending on TEM sample thickness |
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Accuracy of lattice spacing measurements by HRTEM/FFT/electron diffraction |
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HRTEM images & electron diffraction of amorphous metallic glasses |
|
Zone-axis diffraction (ZAP) patterns |
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Microdiffraction pattern/shadow image/Ronchigram in STEM |
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Electron spot/beam size and shape limited by diffraction |
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Double/multiple diffraction in electron diffraction patterns |
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Interference between direct and diffracted beams in TEM |
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Coherence between diffracted electron beams in TEMs |
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Relationship between electron diffraction & image, and Fourier transform |
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Two-beam dynamical electron scattering/diffraction |
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Two-beam kinematic electron scattering/diffraction |
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Integrated reflection coefficient |
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Projector lenses and image/diffraction distortion in EMs |
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Relationship between diffraction group and point group |
|
Standard SOLZ diffraction patterns for various crystal structures |
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Comparison of lens conditions between TEM diffraction and TEM imaging modes |
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Laue‘s diffraction condition |
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Radial distribution function from electron diffraction patterns |
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Purity of Z-contrast in HAADF-STEM (removing diffraction contrast) |
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Focus of electron diffraction in TEM |
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Shape of electron diffraction spots |
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Crystal orientation/diffraction effects on EELS signals |
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Determination of primitive unit cell by electron diffraction |
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Halo feature in electron diffraction patterns |
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Kinematically diffracted electron and X-ray beams & their intensities |
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Electron diffraction pattern depending on electron wavelength/voltage |
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Debye-Scherrer rings in electron diffraction patterns |
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Relationship between electron diffraction patterns and stereographic projections |
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Calibration of electron diffraction patterns |
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EELS measurement in diffraction mode |
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Strain/Stress measurement using electron diffraction |
|
Rotation method for three dimensional (3D) electron diffraction recording |
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Determination of crystal structures using electron diffraction technique |
|
Gatan Orius SC200D CCD camera |
|
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Diffraction variation due to beam tilt in TEM |
|
Diffraction variation due to TEM sample tilt |
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Extra electron diffraction spots from perovskite crystalline structures |
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Electron diffraction: satellite reflections |
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Main and satellites reflections in electron diffraction patterns |
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Modulation/satellite reflections due to mutually commensurate mismatch |
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Asymmetric electron diffraction patterns |
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Phonon effect on electron diffraction patterns |
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Diffraction pattern formed in imaging condition/image plane/objective plane |
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Diffraction spot and disk in diffraction patterns |
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Diffraction spot and disk in diffraction patterns |
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Inaccuracy/artifacts in electron diffraction and spurious intensities |
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Angle between normals to planes/in electron diffraction pattern |
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Visibility of electron diffraction |
Electron diffraction: Standard indexed diffraction patterns |
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Standard indexed diffraction patterns for bcc crystals |
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Standard indexed diffraction patterns for fcc crystals |
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Standard indexed diffraction patterns for hcp crystals |
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Electron diffraction pattern symmetries |
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HRTEM and electron diffraction of crystals with trigonal symmetry |
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Square symmetry in electron diffraction patterns |
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Rectangular symmetry in electron diffraction patterns |
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HRTEM imaging and electron diffraction of hexagonal symmetry |
Electron diffraction patterns of various materials |
|
Analysis of interatomic spacing of amorphous materials using electron diffraction |
|
Analysis of free volume of amorphous materials using electron diffraction |
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Electron diffraction patterns of polycrystalline materials |
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Diffraction patterns of silicon (Si) |
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Diffraction patterns of cobalt disilicide (CoSi2) and cobalt silicide (CoSi) |
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Electron diffraction patterns of amorphous carbon |
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Misfit layer chalcogenides |
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Electron diffraction: streaks, splitting
and
diffuse scattering of electrons in TEM
|
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Diffuse diffraction streaks in electron diffraction from columnar substructures |
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Energy filter applied to observation of thermal-diffuse streaks in electron diffractions |
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Streaks formed by smearing/blooming in CCD camera |
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Diffuse scattering in electron diffraction due to crystalline disorder |
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Elemental-ordering-induced diffuse streaks in electron diffraction patterns |
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Phase-induced splitting of reflections in electron diffraction patterns |
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Streaking of diffraction spots due to thin structures in TEM specimens |
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Background of electron diffraction pattern in TEM |
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Contribution of partial temporal coherence to diffractograms |
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Contribution of partial spatial coherence to diffractograms |
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Contribution of mechanical vibrations to diffractograms |
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Contribution of specimen thickness to diffractograms |
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Contribution of specimen drift to diffractograms |
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Contribution of transfer properties of detector to diffractograms |
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Diffractogram vs spatial resolution |
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Effect of random distribution of atom positions on diffractograms |
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“Ghost Feature” in 2-D diffractograms |
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Noise intensity of diffractograms |
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Additional spots due to inadequate gain normalization (in diffractograms obtained by Fourier transformation) |
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Diffractogram intensity of thin amorphous TEM specimen |
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Diffractogram intensity spectra in TEM measurements |
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Diffractogram & phase Contrast Transfer Function (pCTF) |
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Diffractogram in FE-TEMs |
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Diffractogram in CTEM with LaB6 or W electron guns |
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Aberration measurement method based on diffractogram |
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Correction of astigmatism of objective lens in TEM based on diffractogram |
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Energy filter applied to observation of weak reflections in electron diffractions |
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Energy filter applied to observation of Kikuchi lines and bands |
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Improvement of CBED analysis by energy filter |
|
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Electron diffraction: Weak spots |
|
Weak spots related to superstructures in electron diffractions |
|
Effect of screw axis on electron diffraction patterns |
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Yields |
|
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Coefficients of elastic backscattering electrons |
|
Coefficients of inelastic backscattering electrons |
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Secondary electron emission coefficient |
|
Dependence of emission coefficient of secondary electrons on atomic number and accelerating voltage of incident beam |
Electron–hole (e–h) pair |
|
Electron–hole (e–h) pair generation due to energetic beam irradiation |
|
Thermal e-h Pair |
|
Electron holography |
|
Electron lenses |
|
Rotationally symmetrical electron lenses/magnetic field |
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Techniques in electron microscopes |
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Column of electron microscopes |
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Operations of electron microscopes |
|
Comparison between optical and electron microscopes |
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Optics in electron and ion microscopes |
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EM analysis of biological materials |
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Vacuum levels and UHV (ultra-high vacuum) in EMs |
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EM companies in stock markets |
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Speed considerations in EM analyses |
Electron microscopy (EM) image analysis |
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Highlight bright features in EM images |
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Specimen preparations for SEM observation and electron probe microanalysis (EPMA) |
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Electron Relaxation |
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Electron relaxation and Auger electron |
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Electron relaxation and X-Ray |
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Electron relaxation and light/cathodoluminescence |
Electron scattering |
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Electron scattering with phonons |
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Energy dependence of electron scattering |
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Energy resolution of EDS |
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X-ray generation by scattering of incident electrons |
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Electron scattering within TEM specimen |
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Electron scattering within SEM specimen |
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Energy of electron beam through TEM specimen |
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Incoherent electron scattering (not-in-phase) |
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Compton scattering of electrons |
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Kinematic scattering of electrons |
Electron scattering categorized by occurrence probability (three types)
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Single scattering of electrons |
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Plural scattering of electrons |
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Multiple scattering of electrons |
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Electron subshells |
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Field-emission gun |
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LaB6 filament |
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Tungsten electron gun |
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LaB6 electron gun |
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Lifetime of electron gun |
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Materials used for electron gun |
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Schottky emission electron guns |
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Cold field emission electron gun |
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Wehnelt unit in electron source |
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Thermionic emission |
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Electron gun saturation |
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Contamination in electron guns in EMs |
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Flashing electron guns |
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Electron beam current noise in EMs |
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Charging and discharging in electron guns |
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Gun-alignment/adjustment and its coil control system |
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Emission current in electron guns |
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Probe/beam current in EMs (TEM, STEM, SEM) |
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Heating temperature of electron guns |
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Reasons causing electron filament (gun) failure |
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Vacuum of electron source/gun |
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Bias electrode in electron guns |
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Electrostatic gun lens in EMs |
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Electron probe X-ray microanalyzer (EPMA) |
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Measurement of electron beam/probe current |
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Large electron source |
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Small electron source |
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Electron beam distortion |
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Evaluation of probe size in EMs |
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Electron beam drift in TEMs |
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Spatial coherence/incoherence of electron source |
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Instability/variation of electron gun emission |
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Brightness of electron gun |
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Partial coherence of electron source |
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Plane wave of electron beam |
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Monochromatic electron source in EMs |
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Electron beam convergence in TEM |
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Electrons emitted at low & high angles from electron guns |
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Temporal coherence/incoherence of electron source |
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Solid angle of electron source (in electron gun) |
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Thermo-ionic cathode for electron gun (thermal FEG) |
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Energy distribution/spread/width of electron sources |
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Electron-gun high-voltage power supply in EMs |
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Electron beam distortion |
Electron energy in electron beams in EMs |
Electron dose inducing material damage in bulk and at sample surface |
Electrons passing through magnetic lens |
Electron spectroscopy |
Electron spectroscopy imaging (ESI) |
Electron wavefunctions |
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Electron velocity/wavelength/high voltage |
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Electron inelastic mean free path of elements and compounds |
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Electronic |
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Electronic technology |
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Electronic optical imaging sensor |
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Electronic noise in TEM/STEM/SEM/EELS/EDS systems |
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Study of electronic structure by EXELFS |
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Study of electronic structure by low-loss EELS |
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Electronic point defects |
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Electronic and optical interband transitions |
Electrostatic |
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Electrostatic charging in EMs |
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Electron motion in electrostatic and magnetic fields |
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Electrostatic shutter in EMs |
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Electrostatic gun lens in EMs |
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Electrostatic force |
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Castaing-Henry (C-H) magnetic prism/electrostatic mirror |
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ESD (electrostatic discharge) failure of CMOS technology |
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Electropolishing for TEM sample preparation |
Emission Microscopy (EMMI) for failure analysis in ICs |
Energy |
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Energy of backscattered electrons |
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Energy of secondary electrons |
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Energy spread of electron beams in EMs |
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Extra energy in crystals introduced by dislocations |
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Incoherence/energy spread in SEM imaging |
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Energy level diagrams for single atoms, dimers, clusters & bulk materials |
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EELS energy resolution improvement by deconvolution (energy spread of beam) |
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Diatomic bond strength/bond energy |
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Energy change of incident electron after passing specimen |
Energy band of solids |
Energy dispersion |
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Energy dissipation of primary electrons (PE) in materials |
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Energy dispersion in EELS |
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Error of energy dispersion and its calibration in EELS measurements |
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Dispersion compensation EELS |
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Omega filter |
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Wien filter |
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Comparison of electron optics of various filters & spectrometers |
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Post-column energy filters & spectrometers |
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In-column energy filters & spectrometers |
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Top-hat filter for EELS |
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Dopant energy levels in crystalline silicon |
Energy gap in solids |
Energy loss function (ELF) in interaction of incident electrons with materials |
Mean energy loss per inelastic electron collision |
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EELS energy resolution limited by geometric aberration |
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EELS energy resolution improvement by deconvolution |
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Effects of entrance aperture/collection angle on EELS and optimization |
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Analysis of surface plasmon resonances affected by zero-loss peak and energy resolution |
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EELS energy resolutions affected by energy spreading of beam & improved by monochromators |
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Energy/wavelength of moving electrons in vacuum |
Energy stability of EELS |
Engines |
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CFM56 engines |
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Environmental SEM |
Environment/room/installation of EM systems |
Environmental/In Situ TEM/STEM observations |
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Energy transfer for atomic displacement/knock-on process due to electron irradiation |
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Energy transfer due to elastic scattering |
Energetic beam irradiation induced phenomena |
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Excitation of the valence-band electrons due to energetic beam irradiation |
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Effects of entrance aperture/collection angle on EELS and optimization |
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Hole mask/entrance mask in GIF system |
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Detector envelope function in EM imaging |
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Spatial coherence envelopes |
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Temporal-coherence envelope function |
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Lattice-mismatched epitaxial alloy |
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SiGe/Si system and its defects |
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Quality of epitaxial layers |
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Equivalent circuit diagrams |
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Equivalent circuit diagram of PVC in FIB and SEM |
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Equivocal space groups |
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Escape depth |
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Maximum escape depth of X-rays |
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(Maximum) escape depth of secondary electrons and its surface sensitivity |
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Escape peak in EDS/X-ray profiles |
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Etching |
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Etching/sputtering threshold energies by energetic electron & ion beams |
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Etching of III-V/compound semiconductor materials |
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Etching optimization to suppress IC failure |
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Etchants used in semiconductor manufacturing |
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Hydrofluoric acid (HF) etching |
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KOH (potassium hydroxide) etching |
Eucentric height |
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Standard focus/Eucentric height versus sample tilt in TEM |
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Eucentric height of specimen in TEM and its adjustment |
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Wobbler for finding Eucentric height of specimen in TEM |
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Europium (Eu) |
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Eu1-pCr2X4-p (X = S, Se) |
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Eutectic point |
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Evaporator |
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Vacuum evaporator in EMs |
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Excitation of electrons |
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Excitation of the valence-band electrons due to energetic beam irradiation |
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Critical excitation energy |
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Excitation of inner-shell electrons |
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EXELFS (extended energy loss fine structure) |
Extended x-ray absorption fine structure (EXAFS) |
Experiments |
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Success of EM experiments |
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{311} defects |
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Stacking faults |
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Dislocation loops |
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Charging in electron microscopes (EMs) |
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Mechanical vibration effects on EMs |
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Nonuniform magnetic properties of pole-piece material |
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Fluctuation of stray magnetic fields |
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Vacuum contamination in EMs |
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Extinction distance |
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Electron extinction distances of various materials |
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Dynamical extinction lines in CBED patterns |
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TEM sample thickness determination by thickness fringes: extinction distance |
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Exit wavefunction & intensity from STEM specimen |
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Exit plane/object wave function from TEM specimen |
Expenses of EM and its related systems and services |
Extra diffraction spots in TEM diffraction patterns |
Experts in the field of electron microscopies |
Excitation coefficient for plane wave incidence |
Extraction voltage in electron source |
Extractor of ions in FIB |
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Excitation error and Ewald sphere in CBED |
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Exposure/acquisition time limited by instabilities in EELS and EFTEM |
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Binning versus saturation/exposure time in CCD camera |
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Ewald sphere and excitation error in CBED |
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